Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018143986) QUANTUM DOT ARRAY DEVICES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/143986 International Application No.: PCT/US2017/016130
Publication Date: 09.08.2018 International Filing Date: 02.02.2017
IPC:
H01L 49/00 (2006.01) ,H01L 29/775 (2006.01) ,H01L 29/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
775
with one-dimensional charge carrier gas channel, e.g. quantum wire FET
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors:
GEORGE, Hubert C.; US
CLARKE, James S.; US
PILLARISETTY, Ravi; US
ROBERTS, Jeanette M.; US
THOMAS, Nicole K.; US
YOSCOVITS, Zachary R.; US
CAUDILLO, Roman; US
AMIN, Payam; US
Agent:
ZAGER, Laura A.; US
Priority Data:
Title (EN) QUANTUM DOT ARRAY DEVICES
(FR) DISPOSITIFS DE RÉSEAU À POINTS QUANTIQUES
Abstract:
(EN) Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a plurality of pillars, wherein individual pillars include a quantum well layer, at least two of the pillars are spaced apart in a first dimension, at least two of the pillars are spaced apart in a second dimension, and the first and second dimensions are perpendicular; an insulating material between at least two of the pillars spaced apart in the first dimension and at least two of the pillars spaced apart in the second dimension; and a plurality of gates disposed above corresponding individual ones of the pillars.
(FR) La présente invention concerne des dispositifs à points quantiques, ainsi que des procédés et des dispositifs informatiques associés. Par exemple, dans certains modes de réalisation, un dispositif à points quantiques peut comprendre : une pluralité de piliers, des piliers individuels comprenant une couche de puits quantique, au moins deux des piliers étant espacés dans une première dimension, au moins deux des piliers étant espacés dans une seconde dimension, et les première et seconde dimensions étant perpendiculaires l'une à l'autre ; un matériau isolant entre au moins deux des piliers espacés dans la première dimension et au moins deux des piliers espacés dans la seconde dimension ; et une pluralité de grilles disposées au-dessus des piliers individuels correspondants des piliers.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)