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1. (WO2018143611) METHOD FOR MANUFACTURING LARGE-AREA METAL CHALCOGENIDE THIN FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE COMPRISING METAL CHALCOGENIDE THIN FILM MANUFACTURED THEREBY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/143611 International Application No.: PCT/KR2018/001166
Publication Date: 09.08.2018 International Filing Date: 26.01.2018
IPC:
B05D 7/24 (2006.01) ,B05D 3/02 (2006.01) ,C23C 18/12 (2006.01) ,C23C 18/04 (2006.01) ,B05D 3/14 (2006.01) ,H01L 45/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
05
SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
D
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
7
Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
24
for applying particular liquids or other fluent materials
B PERFORMING OPERATIONS; TRANSPORTING
05
SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
D
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
3
Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
02
by baking
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02
by thermal decomposition
12
characterised by the deposition of inorganic material other than metallic material
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02
by thermal decomposition
04
Pretreatment of the material to be coated
B PERFORMING OPERATIONS; TRANSPORTING
05
SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
D
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
3
Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
14
by electrical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
포항공과대학교 산학협력단 POSTECH ACADEMY-INDUSTRY FOUNDATION [KR/KR]; 경상북도 포항시 남구 청암로 77 77, Cheongam-ro, Nam-gu Pohang-si Gyeongsangbuk-do 37673, KR
Inventors:
정운룡 JEONG, Unyong; KR
기리아누팜 GIRI, Anupam; KR
양희승 YANG, Heeseung; KR
Agent:
이수열 LEE, Soo Yeol; KR
Priority Data:
10-2017-001478402.02.2017KR
Title (EN) METHOD FOR MANUFACTURING LARGE-AREA METAL CHALCOGENIDE THIN FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE COMPRISING METAL CHALCOGENIDE THIN FILM MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION DE FILM MINCE DE CHALCOGÉNURE MÉTALLIQUE DE GRANDE SURFACE, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE COMPRENANT UN FILM MINCE DE CHALCOGÉNURE MÉTALLIQUE AINSI FABRIQUÉ
(KO) 대면적 금속 칼코겐 박막의 제조방법 및 이에 의해 제조된 금속 칼코겐 박막을 포함하는 전자소자의 제조방법
Abstract:
(EN) The present invention relates to a method for manufacturing a large-area metal chalcogenide thin film and a device comprising the large-area metal chalcogenide thin film manufactured thereby, the method comprising the steps of: preparing a polymer-precursor solution; coating a substrate with the polymer-precursor solution; and heat-treating the substrate coated with the polymer-precursor solution. A high-quality, large-area metal chalcogenide thin film having a uniform thickness and composition can be manufactured at low cost according to the manufacturing method of the present invention.
(FR) La présente invention concerne un procédé de fabrication d'un film mince de chalcogénure métallique de grande surface et un dispositif comprenant le film mince de chalcogénure métallique de grande surface ainsi fabriqué, le procédé comprenant les étapes consistant à : préparer une solution de précurseur de polymère ; revêtir un substrat avec la solution de précurseur de polymère ; et traiter thermiquement le substrat revêtu de la solution de précurseur de polymère. Un film mince de chalcogénure métallique de grande surface et de grande qualité ayant une épaisseur et une composition uniformes peut être fabriqué à faible coût selon le procédé de fabrication de la présente invention.
(KO) 본 발명은 고분자-전구체 용액을 준비하는 단계; 상기 고분자-전구체 용액을 기판 상에 코팅하는 단계; 및 상기 고분자-전구체 용액이 코팅된 기판을 열처리하는 단계를 포함하는 대면적 금속 칼코겐 박막의 제조방법 및 이에 의해 제조된 대면적 금속 칼코겐 박막을 포함하는 소자에 관한 것으로, 본 발명의 제조방법에 따르면 저렴한 비용으로 두께 및 조성이 균일한 고품질의 대면적 금속 칼코겐 박막을 제조할 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)