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1. (WO2018143532) GRAPHENE SEMICONDUCTOR DESIGN METHOD

Pub. No.:    WO/2018/143532    International Application No.:    PCT/KR2017/010178
Publication Date: Fri Aug 10 01:59:59 CEST 2018 International Filing Date: Tue Sep 19 01:59:59 CEST 2017
IPC: H01L 29/16
H01L 29/66
H01L 29/06
C01B 32/20
H01L 21/02
Applicants: KIM, Mee Jeong
김미정
Inventors: KIM, Mee Jeong
김미정
Title: GRAPHENE SEMICONDUCTOR DESIGN METHOD
Abstract:
The present invention relates to a graphene semiconductor design method, which: designs a semiconductor of a graphene material by varying, by means of a resonator, an angular frequency ω and effective permittivity εeff of a plasmon medium; and forms a meta material by changing a feeding direction of the plasmon medium, so as to generate a surface plasmon resonance phenomenon, thereby enabling a graphene semiconductor to be integrated.