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1. (WO2018143429) POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/143429 International Application No.: PCT/JP2018/003658
Publication Date: 09.08.2018 International Filing Date: 02.02.2018
IPC:
H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants: MITSUBISHI ELECTRIC CORPORATION[JP/JP]; 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors: HORIGUCHI, Takeshi; JP
MIYAZAKI, Yuji; JP
YANAGIMOTO, Tatsunori; JP
Agent: FUKAMI PATENT OFFICE, P.C.; Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2017-01920606.02.2017JP
Title (EN) POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
(FR) MODULE SEMICONDUCTEUR DE PUISSANCE ET DISPOSITIF DE CONVERSION DE PUISSANCE
(JA) 電力用半導体モジュールおよび電力変換装置
Abstract:
(EN) A compact power semiconductor module and a power conversion device capable of suppressing ringing are provided. The power semiconductor module comprises: a positive electrode-side switching element (16P) and a positive electrode-side freewheeling diode (17P), which are positive electrode-side power semiconductor elements; a negative electrode-side switching element (16N) and a negative electrode-side freewheeling diode (17N), which are negative electrode-side power semiconductor elements; a positive electrode conductor pattern (3a); a negative electrode conductor pattern (3b); an alternating current electrode pattern (3c); and a snubber substrate comprising an insulating substrate (8) on which a snubber circuit is formed. The snubber substrate includes the insulating substrate (8), and at least one snubber circuit disposed on the insulating substrate (8). The snubber substrate is disposed on at least any one of the positive electrode conductor pattern (3a), the negative electrode conductor pattern (3b), and the alternating current electrode pattern (3c).
(FR) L'invention concerne un module semiconducteur de puissance compact et un dispositif de conversion de puissance capables de supprimer la suroscillation. Le module semiconducteur de puissance comprend : un élément de commutation côté électrode positive (16P) et une diode de roue libre côté électrode positive (17P), qui sont des éléments semiconducteurs de puissance côté électrode positive ; un élément de commutation côté électrode négative (16N) et une diode de roue libre côté électrode négative (17N), qui sont des éléments semiconducteurs de puissance côté électrode négative ; un motif conducteur d'électrode positive (3a) ; un motif conducteur d'électrode négative (3b) ; un motif d'électrode à courant alternatif (3c) ; et un substrat d'amortissement comprenant un substrat isolant (8) sur lequel est formé un circuit d'amortissement. Le substrat d'amortissement comprend le substrat isolant (8), et au moins un circuit d'amortissement disposé sur le substrat isolant (8). Le substrat d'amortissement est disposé sur au moins l'un quelconque du motif conducteur d'électrode positive (3a), du motif conducteur d'électrode négative (3b) et du motif d'électrode à courant alternatif (3c).
(JA) リンギングを抑制することが可能な、小型の電力用半導体モジュールおよび電力変換装置を提供する。電力用半導体モジュールは、正極側電力用半導体素子である正極側スイッチング素子(16P)および正極側還流ダイオード(17P)と、負極側電力用半導体素子である負極側スイッチング素子(16N)および負極側還流ダイオード(17N)と、正極導体パターン(3a)と、負極導体パターン(3b)と、交流電極パターン(3c)と、スナバ回路が形成された絶縁基板(8)からなるスナバ基板とを備える。スナバ基板は、絶縁基板(8)と、当該絶縁基板(8)に配置された少なくとも1つのスナバ回路とを含む。スナバ基板は正極導体パターン(3a)と負極導体パターン(3b)と交流電極パターン(3c)との少なくともいずれか1つ上に配置される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)