Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018142870) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/142870 International Application No.: PCT/JP2018/000479
Publication Date: 09.08.2018 International Filing Date: 11.01.2018
IPC:
H01L 33/32 (2010.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
日機装株式会社 NIKKISO CO., LTD. [JP/JP]; 東京都渋谷区恵比寿4丁目20番3号 20-3, Ebisu 4-chome, Shibuya-ku Tokyo 1506022, JP
Inventors:
松倉 勇介 MATSUKURA Yusuke; JP
ペルノ シリル PERNOT Cyril; JP
Agent:
森下 賢樹 MORISHITA Sakaki; JP
Priority Data:
2017-01685801.02.2017JP
Title (EN) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION D’ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEURS
(JA) 半導体発光素子および半導体発光素子の製造方法
Abstract:
(EN) Provided is a semiconductor light-emitting element having: an n-type clad layer 24 which is formed of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material and contains silicon (Si); an intermediate layer 25 which is disposed on the n-type clad layer 24 and contains Si; an active layer 26 which is disposed on the intermediate layer 25 and is formed of an AlGaN-based semiconductor material; and a p-type semiconductor layer disposed on the active layer 26. The distribution of Si concentration along the direction in which the n-type clad layer 24, the intermediate layer 25, and the active layer 26 are laminated has at least a local peak at the position of the intermediate layer 25.
(FR) L'invention concerne un élément électroluminescent à semi-conducteurs présentant : une couche de revêtement de type n 24 qui est formée d'un matériau semi-conducteur à base de nitrure d'aluminium de type n (AlGaN) et qui contient du silicium (Si) ; une couche intermédiaire 25 qui est disposée sur la couche de revêtement de type n 24 et contient du silicium ; une couche active 26 qui est disposée sur la couche intermédiaire 25 et est formée d'un matériau semi-conducteur à base d'AlGaN ; et une couche semi-conductrice de type p disposée sur la couche active 26. La distribution de la concentration de silicium le long de la direction dans laquelle la couche de revêtement de type n 24, la couche intermédiaire 25 et la couche active 26 sont stratifiées présente au moins un pic local à la position de la couche intermédiaire 25.
(JA) 半導体発光素子は、シリコン(Si)を含むn型窒化アルミニウムガリウム(AlGaN)系半導体材料のn型クラッド層24と、n型クラッド層24上に設けられ、Siを含む中間層25と、中間層25上に設けられるAlGaN系半導体材料の活性層26と、活性層26上に設けられるp型半導体層と、を備える。n型クラッド層24、中間層25および活性層26が積層される方向のSi濃度の分布が中間層25の位置に少なくとも局所的なピークを有する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)