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1. (WO2018142478) SEMICONDUCTOR MEMORY DEVICE

Pub. No.:    WO/2018/142478    International Application No.:    PCT/JP2017/003446
Publication Date: Fri Aug 10 01:59:59 CEST 2018 International Filing Date: Wed Feb 01 00:59:59 CET 2017
IPC: G06F 12/00
Applicants: ZENTEL JAPAN CORPORATION
ゼンテルジャパン株式会社
Inventors: KUBO, Takashi
久保 貴志
HARAGUCHI, Masaru
原口 大
HAMAMOTO, Takeshi
濱本 武史
YASUDA, Kenichi
安田 憲一
TSUKIKAWA, Yasuhiko
月川 靖彦
IGA, Hironori
伊賀 裕倫
Title: SEMICONDUCTOR MEMORY DEVICE
Abstract:
A plurality of memory cells (11) are arranged along a plurality of bit lines (13) and a plurality of word lines (15). A sense amplifier (14) is connected to each of the bit lines (13). Arranged along each bit line (13) are at least four memory cells (11) including first to fourth memory cells (11) that are either connected to or disconnected from one of the bit lines (13) by means of first to fourth switching elements (12) according to an active or inactive state of first to fourth word lines (15). The first memory cell (11) stores a first bit value, the second memory cell (11) stores a second bit value, and the third and fourth memory cells (11) each store a third bit value. A memory cell array control circuit (22) activates and then deactivates the third and fourth word lines (15), subsequently activates the first and second word lines (15), and then activates the sense amplifier (14).