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1. WO2018142177 - 90-DEGREE LUMPED AND DISTRIBUTED DOHERTY IMPEDANCE INVERTER

Publication Number WO/2018/142177
Publication Date 09.08.2018
International Application No. PCT/IB2017/000722
International Filing Date 02.02.2017
IPC
H03F 1/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
H01L 23/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
H03F 1/56 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
H03F 3/195 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
195in integrated circuits
H03F 3/24 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
24of transmitter output stages
H01P 5/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
PWAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE
5Coupling devices of the waveguide type
12Coupling devices having more than two ports
CPC
H01L 2223/6611
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6611Wire connections
H01L 2223/6627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6627Waveguides, e.g. microstrip line, strip line, coplanar line
H01L 2223/6655
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6644Packaging aspects of high-frequency amplifiers
6655Matching arrangements, e.g. arrangement of inductive and capacitive components
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
Applicants
  • MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC. [US]/[US]
Inventors
  • BOUISSE, Gerard
  • ALEXANDER, Andrew
  • PATTERSON, Andrew
Agents
  • MORRIS, James, H.
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) 90-DEGREE LUMPED AND DISTRIBUTED DOHERTY IMPEDANCE INVERTER
(FR) INVERSEUR D'IMPÉDANCE DE DOHERTY GROUPÉ ET RÉPARTI À 90 DEGRÉS
Abstract
(EN) Apparatus and methods for a modified Doherty amplifier operating at gigahertz frequencies are described. The combining of signals from a main amplifier (132) and a peaking amplifier (138) occur at a combining node prior to impedance matching of the amplifier's output to a load. An impedance inverter (410) comprises a first integrated distributed inductor and a second integrated distributed inductor connected by a capacitor (580), wherein the impedance inverter (410) is connected between an output of the main amplifier (132) and the combining node.
(FR) L'invention concerne un appareil et des procédés pour un amplificateur de Doherty modifié fonctionnant à des fréquences de l'ordre du gigahertz. La combinaison de signaux provenant d'un amplificateur principal (132) et d'un amplificateur (138) de crêtes a lieu au niveau d'un nœud de combinaison avant l'adaptation d'impédance de la sortie de l'amplificateur à une charge. Un inverseur (410) d'impédance comporte un premier inducteur réparti intégré et un deuxième inducteur réparti intégré reliés par un condensateur (580), l'inverseur (410) d'impédance étant branché entre une sortie de l'amplificateur principal (132) et le nœud de combinaison.
Related patent documents
EP2017734137This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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