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1. (WO2018141916) APPARATUS AND METHOD FOR EXFOLIATING MATERIAL LAYERS OF LAYERED MATERIAL AND METHOD AND APPARATUS FOR PRODUCING A NANOSTRUCTURE BY MEANS OF GAS PHASE DEPOSITION FOR THIS PURPOSE
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Pub. No.: WO/2018/141916 International Application No.: PCT/EP2018/052685
Publication Date: 09.08.2018 International Filing Date: 02.02.2018
IPC:
C01B 32/19 (2017.01) ,H01L 21/00 (2006.01) ,C23C 16/30 (2006.01)
[IPC code unknown for C01B 32/19]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
Applicants:
DORN, August [DE/DE]; DE
Inventors:
DORN, August; DE
Agent:
GRAMM, LINS & PARTNER PATENT- UND RECHTSANWÄLTE PARTGMBB; Freundallee 13a 30173 Hannover, DE
Priority Data:
10 2017 102 195.703.02.2017DE
10 2017 102 196.503.02.2017DE
Title (EN) APPARATUS AND METHOD FOR EXFOLIATING MATERIAL LAYERS OF LAYERED MATERIAL AND METHOD AND APPARATUS FOR PRODUCING A NANOSTRUCTURE BY MEANS OF GAS PHASE DEPOSITION FOR THIS PURPOSE
(FR) DISPOSITIF ET PROCÉDÉ D'EXFOLIATION DE COUCHES DE MATÉRIAU EN COUCHES, AINSI QUE PROCÉDÉ ET DISPOSITIF DE PRODUCTION D'UNE NANOSTRUCTURE AU MOYEN D'UN DÉPÔT PHYSIQUE EN PHASE GAZEUSE
(DE) VORRICHTUNG UND VERFAHREN ZUR EXFOLATION VON MATERIALSCHICHTEN GESCHICHTETEN MATERIALS SOWIE VERFAHREN UND VORRICHTUNG ZUR ERZEUGUNG EINER NANOSTRUKTUR MITTELS GASPHASENABSCHEIDUNG HIERZU
Abstract:
(EN) The invention relates to an apparatus (10) for exfoliating material layers (22) of layered material (12), particularly for exfoliating graphene from graphite. Said apparatus (10) comprises a first receptacle (14), designed to receive the layered material (12), and a second receptacle (16), designed to receive the material layers (22), the first receptacle (14) and the second receptacle (16) being mounted so as to be movable relative to each other. The invention also relates to a method and an apparatus for producing a nanostructure by way of gas phase deposition, the deposition being controlled by an electric field.
(FR) L'invention concerne un dispositif (10) d'exfoliation de couches (22) de matériau (12) en couches, en particulier pour l'exfoliation de graphène du graphite. Le dispositif (10) comporte un premier logement (14), conçu pour loger le matériau (12) en couches et un deuxième logement (16), conçu pour loger les couches (22) de matériau, le premier logement (14) et le deuxième logement (16) étant montés mobiles l'un par rapport à l'autre. L'invention concerne en outre un procédé et un dispositif de production d'une nanostructure au moyen d'un dépôt physique en phase gazeuse, le dépôt étant commandé par un champ électrique.
(DE) Gezeigt wird eine Vorrichtung (10) zur Exfoliation von Materialschichten (22) geschichteten Materials (12), insbesondere zur Exfoliation von Graphen aus Graphit. Die Vorrichtung (10) umfasst eine erste Aufnahme (14), eingerichtet zur Aufnahme des geschichteten Materials (12) und eine zweite Aufnahme (16), eingerichtet zur Aufnahme der Materialschichten (22), wobei die erste Aufnahme (14) und die zweite Aufnahme (16) relativ zueinander beweglich gelagert sind. Gezeigt wird weiterhin in Verfahren und eine Vorrichtung zur Erzeugung einer Nanostruktur mittels Gasphasenabscheidung, wobei die Abscheidung durch ein elektrisches Feld gesteuert wird.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)