Processing

Please wait...

Settings

Settings

Goto Application

1. WO2018141867 - POWER SEMICONDUCTOR MODULE WITH SHORT CIRCUIT FAILURE MODE

Publication Number WO/2018/141867
Publication Date 09.08.2018
International Application No. PCT/EP2018/052559
International Filing Date 01.02.2018
IPC
H01L 23/051 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape
043the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
051another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
H01L 23/535 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
535including internal interconnections, e.g. cross-under constructions
H01L 23/62 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
62Protection against overcurrent or overload, e.g. fuses, shunts
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 29/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 23/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48105Connecting bonding areas at different heights
H01L 2224/48249
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48245the item being metallic
48247connecting the wire to a bond pad of the item
48249the bond pad protruding from the surface of the item
H01L 2224/72
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
71Means for bonding not being attached to, or not being formed on, the surface to be connected
72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
H01L 2224/73201
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73201on the same surface
H01L 23/051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape ; of the container or parts, e.g. caps, walls
043the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
051another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
Applicants
  • ABB SCHWEIZ AG [CH]/[CH]
Inventors
  • LIU, Chunlei
  • SCHUDERER, Jürgen
  • BREM, Franziska
  • RAHIMO, Munaf
  • STEIMER, Peter Karl
  • DUGAL, Franc
Agents
  • QIP PATENTANWÄLTE DR. KUEHN & PARTNER MBB
Priority Data
17154197.201.02.2017EP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) POWER SEMICONDUCTOR MODULE WITH SHORT CIRCUIT FAILURE MODE
(FR) MODULE SEMICONDUCTEUR DE PUISSANCE À MODE DE DÉFAILLANCE DE COURT-CIRCUIT
Abstract
(EN) A power semiconductor module (10) comprises a base plate (12); a Si chip (16a) comprising a Si substrate, the Si chip (16a) attached to the base plate (12); a first metal preform (22a) pressed with a first press pin (24a) against the Si chip (16a); a wide bandgap material chip (16b) comprising a wide bandgap substrate and a semiconductor switch (28b) provided in the wide bandgap substrate, the wide bandgap material chip (16b) attached to the base plate (12); and a second metal preform (22b) pressed with a second press pin (24b) against the wide bandgap material chip (16b); wherein the Si chip (16a) and the wide bandgap material chip (16b) are connected in parallel via the base plate (12) and via the first press pin (24a) and the second press pin (24b); wherein the first metal preform (22a) is adapted for forming a conducting path through the Si chip (16a), when heated by an overcurrent; and wherein the second metal preform (22b) is adapted for forming an temporary conducting path through the wide bandgap material chip (16b) or an open circuit, when heated by an overcurrent.
(FR) L'invention concerne un module semiconducteur de puissance (10) comprenant une plaque de base (12); une puce de Si (16a) comprenant un substrat de Si, la puce de Si (16a) étant fixée à la plaque de base (12); une première préforme métallique (22a) pressée avec une première broche de pression (24a) contre la puce de Si (16a); une puce de matériau à large bande interdite (16b) comprenant un substrat à large bande interdite et un commutateur à semiconducteur (28b) disposé sur le substrat à large bande interdite, la puce de matériau à large bande interdite (16b) étant fixée à la plaque de base (12); et une seconde préforme métallique (22b) pressée avec une seconde broche de pression (24b) contre la puce de matériau à large bande interdite (16b); la puce de Si (16a) et la puce de matériau à large bande interdite (16b) étant connectées en parallèle par l'intermédiaire de la plaque de base (12) et par l'intermédiaire de la première broche de pression (24a) et de la seconde broche de pression (24b); la première préforme métallique (22a) étant conçue pour former un trajet conducteur à travers la puce de Si (16a), lorsqu'elle est chauffée par une surintensité; et la seconde préforme métallique (22b) étant conçue pour former un trajet de conduction temporaire à travers la puce de matériau à large bande interdite (16b) ou un circuit ouvert, lorsqu'elle est chauffée par une surintensité.
Latest bibliographic data on file with the International Bureau