H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
27 | Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate |
02 | including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier |
04 | the substrate being a semiconductor body |
10 | including a plurality of individual components in a repetitive configuration |
105 | including field-effect components |
112 | Read-only memory structures ; [ROM] and multistep manufacturing processes therefor |
115 | Electrically programmable read-only memories; Multistep manufacturing processes therefor |
11563 | with charge-trapping gate insulators, e.g. MNOS or NROM |
11578 | characterised by three-dimensional arrangements, e.g. with cells on different height levels |
1158 | with source and drain on different levels, e.g. with sloping channels |
11582 | the channels comprising vertical portions, e.g. U-shaped channels |