WO2018140948 INTEGRATED STRUCTURES, NAND MEMORY ARRAYS, AND METHODS OF FORMING INTEGRATED STRUCTURES

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Publication Number WO/2018/140948

Publication Date 02.08.2018

International Application No. PCT/US2018/015962

International Filing Date 30.01.2018

IPC

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CPC

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Applicants

MICRON TECHNOLOGY, INC. [US]/[US]

Inventors

HOPKINS, John, D.
DAYCOCK, David

Agents

MATKIN, Mark, S.
SHAURETTE, James, D.
GRZELAK, Keith, D.
LATWESEN, David, G.
HENDRICKSEN, Mark, W.

Priority Data

15/419,813

30.01.2017

Publication Language English (en)

Filing Language English (EN)

Designated States

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Title

(EN) INTEGRATED STRUCTURES, NAND MEMORY ARRAYS, AND METHODS OF FORMING INTEGRATED STRUCTURES

(FR) STRUCTURES INTÉGRÉES, RÉSEAUX DE MÉMOIRES NAND ET PROCÉDÉS DE FORMATION DE STRUCTURES INTÉGRÉES

Abstract

(EN) Some embodiments include an integrated structure having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include primary regions of a first vertical thickness, and terminal projections of a second vertical thickness which is greater than the first vertical thickness. Charge-blocking material is adjacent the terminal projections. Charge-storage material is adjacent the charge- blocking material. Gate-dielectric material is adjacent the charge-storage material. Channel material is adjacent the gate-dielectric material. Some embodiments include NAND memory arrays. Some embodiments include methods of forming integrated structures.

(FR) Certains modes de réalisation de la présente invention comprennent une structure intégrée ayant un empilement vertical de niveaux isolants alternés et de niveaux conducteurs. Les niveaux conducteurs comprennent des régions primaires d'une première épaisseur verticale, et des projections terminales d'une seconde épaisseur verticale qui est supérieure à la première épaisseur verticale. Un matériau de blocage de charges est adjacent aux projections terminales. Un matériau de stockage de charges est adjacent au matériau de blocage de charges. Le matériau diélectrique de grille est adjacent au matériau de stockage de charges. Le matériau de canal est adjacent au matériau diélectrique de grille. Certains modes de réalisation comprennent des réseaux de mémoire NAND. Certains modes de réalisation de la présente invention incluent des procédés de formation de structures intégrées.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
105	including field-effect components
112	Read-only memory structures
115	Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517	with floating gate
11551	characterised by three-dimensional arrangements, e.g. with cells on different height levels
11553	with source and drain on different levels, e.g. with sloping channels
11556	the channels comprising vertical portions, e.g. U-shaped channels

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
105	including field-effect components
112	Read-only memory structures
115	Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517	with floating gate
11519	characterised by the top-view layout

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
105	including field-effect components
112	Read-only memory structures
115	Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517	with floating gate
11521	characterised by the memory core region
11524	with cell select transistors, e.g. NAND

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
105	including field-effect components
112	Read-only memory structures
115	Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517	with floating gate
11526	characterised by the peripheral circuit region
11529	of memory regions comprising cell select transistors, e.g. NAND

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
105	including field-effect components
112	Read-only memory structures
115	Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517	with floating gate
11551	characterised by three-dimensional arrangements, e.g. with cells on different height levels
11553	with source and drain on different levels, e.g. with sloping channels
11556	the channels comprising vertical portions, e.g. U-shaped channels

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1. WO2018140948 - INTEGRATED STRUCTURES, NAND MEMORY ARRAYS, AND METHODS OF FORMING INTEGRATED STRUCTURES

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40	Electrodes ; ; Multistep manufacturing processes therefor
41	characterised by their shape, relative sizes or dispositions
423	not carrying the current to be rectified, amplified or switched
42312	Gate electrodes for field effect devices
42316	for field-effect transistors
4232	with insulated gate
4234	Gate electrodes for transistors with charge trapping gate insulator

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66	Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007	Multistep manufacturing processes
66075	of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227	the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409	Unipolar field-effect transistors
66477	with an insulated gate, i.e. MISFET
66833	with a charge trapping gate insulator, e.g. MNOS transistors

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66	Types of semiconductor device ; ; Multistep manufacturing processes therefor
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76	Unipolar devices ; , e.g. field effect transistors
772	Field effect transistors
78	with field effect produced by an insulated gate
792	with charge trapping gate insulator, e.g. MNOS-memory transistors
7926	Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40	Electrodes ; ; Multistep manufacturing processes therefor
41	characterised by their shape, relative sizes or dispositions
423	not carrying the current to be rectified, amplified or switched
42312	Gate electrodes for field effect devices
42316	for field-effect transistors
4232	with insulated gate
4234	Gate electrodes for transistors with charge trapping gate insulator