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1. (WO2018140282) ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE BY RUTHENIUM DOPING

Pub. No.:    WO/2018/140282    International Application No.:    PCT/US2018/014210
Publication Date: Fri Aug 03 01:59:59 CEST 2018 International Filing Date: Fri Jan 19 00:59:59 CET 2018
IPC: C23C 16/16
C23C 16/18
C23C 16/56
C23C 16/02
Applicants: APPLIED MATERIALS, INC.
Inventors: WU, Zhiyuan
BEKIARIS, Nikolaos
NAIK, Mehul B.
PARK, Jin Hee
LEE, Mark Hyun
Title: ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE BY RUTHENIUM DOPING
Abstract:
In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.