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1. (WO2018140126) HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THERMAL HEATSINK
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/140126 International Application No.: PCT/US2017/062637
Publication Date: 02.08.2018 International Filing Date: 20.11.2017
Chapter 2 Demand Filed: 01.05.2018
IPC:
H01L 29/737 (2006.01) ,H01L 23/367 (2006.01) ,H01L 29/417 (2006.01) ,H01L 29/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
737
Hetero-junction transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367
Cooling facilitated by shape of device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants: QUALCOMM INCORPORATED[US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors: YANG, Bin; US
TAO, Gengming; US
LI, Xia; US
Agent: LENKIN, Alan M.; US
LUTZ, Joseph; US
PARTOW-NAVID, Puya; US
FASHU-KANU, Alvin V.; US
Priority Data:
15/597,38617.05.2017US
62/450,03424.01.2017US
Title (EN) HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THERMAL HEATSINK
(FR) AMPLIFICATEUR DE PUISSANCE À TRANSISTOR BIPOLAIRE À HÉTÉROJONCTION AVEC DISSIPATEUR THERMIQUE ARRIÈRE
Abstract:
(EN) A heterojunction bipolar transistor may include an emitter (510), a base (502) contacting the emitter, a collector (514) contacting the base, a sub-collector (516) contacting the collector, and an electrical isolation layer (540) contacting the sub-collector. The heterojunction bipolar transistor also includes a backside heatsink (550) thermally coupled to the sub-collector and the collector. The backside heatsink may be aligned with a central axis of the emitter and the base.
(FR) Selon la présente invention, un transistor bipolaire à hétérojonction peut comprendre un émetteur (510), une base (502) entrant en contact avec l’émetteur, un collecteur (514) en contact avec la base, un sous-collecteur (516) entrant en contact avec le collecteur, et une couche d’isolation électrique (540) entrant en contact avec le sous-collecteur. Le transistor bipolaire à hétérojonction comprend en outre un dissipateur thermique arrière (550) thermiquement couplé au sous-collecteur et au collecteur. Le dissipateur thermique arrière peut être aligné avec un axe central de l’émetteur et de la base.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)