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1. (WO2018140119) APPARATUS AND METHOD FOR MINIMIZING THERMAL DISTORTION IN ELECTRODES USED WITH ION SOURCES
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Pub. No.: WO/2018/140119 International Application No.: PCT/US2017/061915
Publication Date: 02.08.2018 International Filing Date: 16.11.2017
IPC:
H01L 21/265 (2006.01) ,H01J 37/317 (2006.01) ,H01L 21/67 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930, US
Inventors:
BUONODONO, James P.; US
Agent:
NIELDS, LEMACK & FRAME, LLC; 176 E. Main Street Suite 5 Westboro, Massachusetts 01581, US
FRAME, Robert C.; US
LEMACK, Kevin S.; US
Priority Data:
15/415,94426.01.2017US
Title (EN) APPARATUS AND METHOD FOR MINIMIZING THERMAL DISTORTION IN ELECTRODES USED WITH ION SOURCES
(FR) APPAREIL ET PROCÉDÉ PERMETTANT DE RÉDUIRE À UN MINIMUM UNE DÉFORMATION SOUS L'EFFET DE LA TEMPÉRATURE DANS DES ÉLECTRODES UTILISÉES AVEC DES SOURCES D'IONS
Abstract:
(EN) An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.
(FR) L'invention concerne un appareil permettant d'améliorer l'uniformité d'un faisceau d'ions. L'appareil comprend un élément chauffant servant à chauffer un bord le plus éloigné de l'ouverture de suppression de l'électrode de suppression. En fonctionnement, le bord de l'électrode de suppression le plus proche de l'électrode de suppression peut être chauffé au moyen du faisceau d'ions. Cette chaleur peut amener l'électrode de suppression à se déformer, altérant l'uniformité du faisceau ionique. En chauffant le bord distal de l'électrode de suppression, la déformation sous l'effet de la température de l'électrode de suppression peut être régulée. Selon d'autres modes de réalisation, le bord distal de l'électrode de suppression est chauffé de manière à créer un faisceau d'ions plus uniforme. En surveillant l'uniformité du faisceau d'ions en aval de l'électrode de suppression, par exemple à l'aide d'un profileur d'uniformité de faisceau, un dispositif de commande peut régler la chaleur appliquée au bord distal de manière à obtenir l'uniformité souhaitée du faisceau d'ions.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)