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1. (WO2018140118) DUAL CATHODE ION SOURCE
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Pub. No.: WO/2018/140118 International Application No.: PCT/US2017/061913
Publication Date: 02.08.2018 International Filing Date: 16.11.2017
IPC:
H01J 27/02 (2006.01) ,H01J 37/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
27
Ion beam tubes
02
Ion sources; Ion guns
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02
Details
04
Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
08
Ion sources; Ion guns
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930, US
Inventors:
KOO, Bon-Woong; US
LU, Jun; US
SINCLAIR, Frank; US
HERMANSON, Eric D.; US
PIERRO, Joseph E.; US
JOHNSON, Michael D.; US
DELUCIA, Michael S.; US
CUCCHETTI, Antonella; US
Agent:
FRAME, Robert C.; Nields, Lemack & Frame, LLC 176 E. Main Street, Suite 5 Westboro, Massachusetts 01581, US
FRAME, Robert C.; US
LEMACK, Kevin S.; US
Priority Data:
15/416,13126.01.2017US
Title (EN) DUAL CATHODE ION SOURCE
(FR) SOURCE D'IONS À DOUBLE CATHODE
Abstract:
(EN) An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
(FR) La présente invention concerne une source d'ions ayant deux cathodes chauffées indirectement. Chacune des cathodes peut être polarisée indépendamment par rapport à son filament respectif de manière à faire varier le profil du courant de faisceau qui est extrait de la source d'ions. Dans certains modes de réalisation, la source d'ions est utilisée conjointement avec un implanteur ionique. L'implanteur ionique comprend un profileur de faisceau permettant de mesurer le courant du faisceau ionique en ruban en fonction de la position du faisceau. Un dispositif de commande utilise ces informations pour commander indépendamment les tensions de polarisation des deux cathodes chauffées indirectement de manière à faire varier l'uniformité du faisceau d'ions en ruban. Dans certains modes de réalisation, le courant traversant chaque filament peut également être commandé indépendamment par le dispositif de commande.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)