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1. (WO2018139877) SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/139877 International Application No.: PCT/KR2018/001131
Publication Date: 02.08.2018 International Filing Date: 25.01.2018
IPC:
H01L 33/22 (2010.01) ,H01L 33/10 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/62 (2010.01) ,H01L 33/58 (2010.01) ,H01L 27/15 (2006.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 98, Huam-ro Jung-gu Seoul 04637, KR
Inventors:
이건화 LEE, Keon Hwa; KR
박수익 PARK, Su Ik; KR
이용경 LEE, Yong Gyeong; KR
김백준 KIM, Baek Jun; KR
김명섭 KIM, Myung Sub; KR
Agent:
허용록 HAW, Yong Noke; KR
Priority Data:
10-2017-001200625.01.2017KR
10-2017-004052430.03.2017KR
10-2017-004052630.03.2017KR
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMICONDUCTEUR
(KO) 반도체 소자
Abstract:
(EN) A semiconductor device according to an embodiment can comprise: a plurality of light emitting structures; a first electrode arranged around the plurality of light emitting structures; a second electrode arranged at upper surfaces of the plurality of light emitting structures; a first bonding pad electrically connected to the first electrode; and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures can comprise: a first light emitting structure including a first conductive type first DBR layer, a first active layer arranged on the first DBR layer, and a second conductive type second DBR layer arranged on the first active layer; and a second light emitting structure including a first conductive type third DBR layer, a second active layer arranged on the third DBR layer, and a second conductive type fourth DBR layer arranged on the second active layer. The first electrode is electrically connected to the first DBR layer and the third DBR layer and can be arranged between the first and second light emitting structures. The second electrode is electrically connected to the second DBR layer and the fourth DBR layer and can be arranged on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.
(FR) Un dispositif à semiconducteur selon un mode de réalisation de la présente invention peut comprendre : une pluralité de structures électroluminescentes; une première électrode agencée autour de la pluralité de structures électroluminescentes; une seconde électrode agencée au niveau des surfaces supérieures de la pluralité de structures électroluminescentes; un premier plot de connexion connecté électriquement à la première électrode; et un second plot de connexion électriquement connecté à la seconde électrode. La pluralité de structures électroluminescentes peut comprendre : une première structure électroluminescente comprenant une première couche DBR de premier type de conductivité, une première couche active disposée sur la première couche DBR, et une seconde couche DBR de second type de conductivité disposée sur la première couche active; et une seconde structure électroluminescente comprenant une troisième couche DBR de premier type de conductivité, une seconde couche active disposée sur la troisième couche DBR, et une quatrième couche DBR de second type de conductivité disposée sur la seconde couche active. La première électrode est électriquement connectée à la première couche DBR et à la troisième couche DBR et peut être disposée entre les première et seconde structures électroluminescentes. La seconde électrode est électriquement connectée à la seconde couche DBR et à la quatrième couche DBR et peut être disposée sur une surface supérieure de la seconde couche DBR et sur une surface supérieure de la quatrième couche DBR.
(KO) 실시 예에 따른 반도체 소자는, 복수의 발광구조물, 복수의 발광구조물 둘레에 배치된 제1 전극, 복수의 발광구조물의 상부 면에 배치된 제2 전극, 제1 전극에 전기적으로 연결된 제1 본딩패드, 제2 전극에 전기적으로 연결된 제2 본딩패드를 포함할 수 있다. 복수의 발광구조물은, 제1 도전형의 제1 DBR층, 제1 DBR층 위에 배치된 제1 활성층, 제1 활성층 위에 배치된 제2 도전형의 제2 DBR층을 포함하는 제1 발광구조물과, 제1 도전형의 제3 DBR층, 제3 DBR층 위에 배치된 제2 활성층, 제2 활성층 위에 배치된 제2 도전형의 제4 DBR층을 포함하는 제2 발광구조물을 포함할 수 있다. 제1 전극은 제1 DBR층과 3 DBR층에 전기적으로 연결되고 제1 발광구조물과 제2 발광구조물 사이에 배치될 수 있다. 제2 전극은 제2 DBR층과 제4 DBR층에 전기적으로 연결되고 제2 DBR층의 상부 면과 제4 DBR층의 상부 면에 배치될 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)