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1. (WO2018139532) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/139532    International Application No.:    PCT/JP2018/002277
Publication Date: Fri Aug 03 01:59:59 CEST 2018 International Filing Date: Fri Jan 26 00:59:59 CET 2018
IPC: G01R 31/26
H01L 21/66
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: AOKI Takaaki
青木 孝明
ITOH Masakazu
伊藤 正和
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A Vg-Ic characteristic at a first temperature; e.g.,room temperature, is measured, and a first threshold value voltage Vth1 is calculated. Next, a Vg-Ic characteristic at a second temperature; e.g., -40°C, is measured, and a second threshold value voltage Vth2 is calculated. On the basis of the value of Vth2 - Vth1, it is determined that a product is a normal, non-defective product if Vth2 - Vth1 ≈ 1, and it is determined that the product is a potentially defective product and an initially defective product if Vth2 = Vth1 < 1.