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1. (WO2018138993) TEMPERATURE SENSOR
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Pub. No.: WO/2018/138993 International Application No.: PCT/JP2017/039172
Publication Date: 02.08.2018 International Filing Date: 30.10.2017
IPC:
G01K 7/16 (2006.01) ,G01K 7/22 (2006.01) ,H01C 7/04 (2006.01)
G PHYSICS
01
MEASURING; TESTING
K
MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
7
Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat
16
using resistive elements
G PHYSICS
01
MEASURING; TESTING
K
MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
7
Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat
16
using resistive elements
22
the element being a non-linear resistance, e.g. thermistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
C
RESISTORS
7
Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
04
having negative temperature coefficient
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
国立大学法人大阪大学 OSAKA UNIVERSITY [JP/JP]; 大阪府吹田市山田丘1番1号 1-1, Yamadaoka, Suita-shi, Osaka 5650871, JP
Inventors:
日置 泰典 HIOKI, Yasunori; JP
関谷 毅 SEKITANI, Tsuyoshi; JP
植村 隆文 UEMURA, Takafumi; JP
尾上 智章 ONOUE, Tomoaki; JP
Agent:
鮫島 睦 SAMEJIMA, Mutsumi; JP
吉田 環 YOSHIDA, Tamaki; JP
Priority Data:
2017-01417830.01.2017JP
Title (EN) TEMPERATURE SENSOR
(FR) CAPTEUR DE TEMPÉRATURE
(JA) 温度センサ
Abstract:
(EN) A temperature sensor comprising a thermistor that has organic-inorganic complex load characteristics, and a transistor, wherein: the thermistor having organic-inorganic complex load characteristics includes a thermistor layer including an organic polymer component and a powder of a spinel semiconductor ceramic composition containing Mn, Ni, and Fe, and a pair of electrode layers; in the powder of a semiconductor ceramic composition, the molar ratio of Mn and Ni is 85/15 ≥ Mn/Ni ≥ 65/35, and the Fe content is 30 mol parts or less, where the total molar amount of Mn and Ni is 100 mol parts; the powder of a semiconductor ceramic composition has a peak having a maximum value near 29-31° in an X-ray diffraction pattern; the half-width of the peak is 0.15 or greater; and the transistor is connected to one of the electrode layers of the thermistor having organic-inorganic complex load characteristics.
(FR) La présente invention concerne un capteur de température comprenant une thermistance qui présente des caractéristiques de charge de complexe organique-inorganique, et un transistor. La thermistance présente des caractéristiques de charge de complexe organique-inorganique comprend une couche de thermistance comprenant un constituant polymère organique et une poudre d'une composition de céramique semi-conductrice spinelle contenant du Mn, du Ni, et du Fe, et une paire de couches d'électrode ; dans la poudre d'une composition de céramique semi-conductrice, le rapport molaire du Mn et du Ni est de 85/15 ≥ Mn/Ni ≥ 65/35, et la teneur en Fe est inférieure ou égale à 30 parties en moles, la quantité molaire totale du Mn et du Ni est de 100 parties en moles ; la poudre d'une composition de céramique semi-conductrice présente un pic ayant une valeur maximale proche de 29-31° dans un diagramme de diffraction des rayons X ; la demi-largeur du pic est supérieure ou égale à 0,15 ; et le transistor est connecté à l'une des couches d'électrode de la thermistance présentant des caractéristiques de charge de complexe organique-inorganique.
(JA) 有機無機複合負特性サーミスタと、トランジスタとを備える温度センサであって、有機無機複合負特性サーミスタは、Mn、NiおよびFeを含むスピネル型半導体磁器組成物の粉末と、有機高分子成分とを含むサーミスタ層と、1対の電極層とを含み、半導体磁器組成物の粉末において、MnとNiとのモル比率が85/15≧Mn/Ni≧65/35であり、かつMnおよびNiの総モル量を100モル部としたとき、Feの含有量が30モル部以下であり、半導体磁器組成物の粉末は、X線回折パターンの29°~31°付近に極大値を有するピークを有し、ピークの半値幅は0.15以上であり、トランジスタは、有機無機複合負特性サーミスタの電極層のいずれか一方と接続される、温度センサ。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)