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1. (WO2018138275) METAL-INSULATOR-GRAPHENE DIODE

Pub. No.:    WO/2018/138275    International Application No.:    PCT/EP2018/051976
Publication Date: Fri Aug 03 01:59:59 CEST 2018 International Filing Date: Sat Jan 27 00:59:59 CET 2018
IPC: H01L 45/00
Applicants: AMO GMBH
Inventors: WANG, Zhenxing
NEUMAIER, Daniel
RIBEIRO, Mário, Alberto, Oliveira
Title: METAL-INSULATOR-GRAPHENE DIODE
Abstract:
The invention relates to a metal-insulator-graphene diode, comprising a metal electrode (34) having an electrode surface, comprising an insulator layer (28), which is in planar contact with the electrode surface via a first main surface (30), and a graphene layer (22), which has a contact surface (26). Said contact surface (26) is in linear contact with a second main surface (30, 32) of the insulator layer (28) located opposite the metal electrode (34). The graphene layer (22) has at least one two-dimensional monolayer. The surface plane of the graphene layer (22) runs transversely to the main surfaces (30, 32).