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1. WO2018138178 - RADIATION DETECTOR PANEL ASSEMBLY STRUCTURE

Publication Number WO/2018/138178
Publication Date 02.08.2018
International Application No. PCT/EP2018/051769
International Filing Date 25.01.2018
Chapter 2 Demand Filed 21.11.2018
IPC
G01T 1/24 2006.1
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
G01T 1/29 2006.1
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
29Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
CPC
G01T 1/24
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
G01T 1/244
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
244Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
G01T 1/2928
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
29Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
2914Measurement of spatial distribution of radiation
2921Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
2928using solid state detectors
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14676
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14665Imagers using a photoconductor layer
14676X-ray, gamma-ray or corpuscular radiation imagers
H01L 27/14696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14696The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Applicants
  • DETECTION TECHNOLOGY OY [FI]/[FI]
Inventors
  • MATIKKALA, Mikko
  • STÅNG, Arsi
Agents
  • PAPULA OY
Priority Data
17153479.527.01.2017EP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) RADIATION DETECTOR PANEL ASSEMBLY STRUCTURE
(FR) STRUCTURE D'ASSEMBLAGE DE PANNEAU DE DÉTECTEUR DE RAYONNEMENT
Abstract
(EN) According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray,radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray,radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current. Other embodiments relate to a detector comprising an array of assemblies, and an imaging system comprising: an x-ray source and the detector.
(FR) La présente invention concerne, selon un mode de réalisation, un procédé consistant à : configurer une plaque de panneau en tant que fenêtre d'entrée pour un rayonnement électromagnétique à haute énergie, comme par exemple des rayons X ou gamma; fixer une plaque de polarisation sur la plaque de panneau, la plaque de polarisation étant configurée pour conduire l'électricité et se laisser traverser par le rayonnement; et fixer un réseau de tuiles, chaque tuile comprenant un capteur à semi-conducteurs composé à conversion directe et une couche de circuit intégré (CI) de lecture sur la plaque de polarisation, de sorte que capteur à semi-conducteurs composé à conversion directe soit configuré sur la plaque de polarisation; le capteur à semi-conducteurs composé à conversion directe étant configuré pour convertir des photons du rayonnement électromagnétique à haute énergie, comme par exemple des rayons X ou gamma, en courant électrique; et la couche de CI de lecture étant située à côté du capteur à semi-conducteurs composé à conversion directe et configurée pour recevoir et traiter le courant électrique. D'autres modes de réalisation de la présente invention concernent un détecteur comprenant un réseau d'ensembles et un système d'imagerie comprenant : une source de rayons X et le détecteur.
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