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1. (WO2018137673) GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL, PREPARATION METHOD AND APPLICATION THEREOF

Pub. No.:    WO/2018/137673    International Application No.:    PCT/CN2018/074058
Publication Date: Fri Aug 03 01:59:59 CEST 2018 International Filing Date: Thu Jan 25 00:59:59 CET 2018
IPC: C30B 29/16
C30B 13/00
C30B 15/00
H01L 31/032
Applicants: SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS CHINESE ACADEMY OF SCIENCES
中国科学院上海光学精密机械研究所
Inventors: XIA, Changtai
夏长泰
SAI, Qinglin
赛青林
ZHOU, Wei
周威
QI, Hongji
齐红基
Title: GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL, PREPARATION METHOD AND APPLICATION THEREOF
Abstract:
The invention discloses a VB group element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β-Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10-4 to 1×104 Ω·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020 / cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at a molar ratio of (0.000000001-0.01):(0.999999999-0.99); and then performing crystal growth. The invention can prepare a high-conductivity β-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.