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1. (WO2018137224) WAFER ENCAPSULATION STRUCTURE AND ENCAPSULATION METHOD
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Pub. No.: WO/2018/137224 International Application No.: PCT/CN2017/072710
Publication Date: 02.08.2018 International Filing Date: 25.01.2017
IPC:
H01L 23/31 (2006.01) ,H01L 21/56 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
Applicants:
深圳市汇顶科技股份有限公司 SHENZHEN GOODIX TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 福田保税区腾飞工业大厦B座13层 Floor 13, Phase B Tengfei Industrial Building, Futian Free Trade Zone Shenzhen, Guangdong 518045, CN
Inventors:
罗军平 LUO, Junping; CN
Agent:
上海晨皓知识产权代理事务所(普通合伙) SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP; 中国上海市 黄浦区制造局路787号二幢202B室 Room 202B, Building 2 787 Zhizaoju Road, Huangpu District Shanghai 200011, CN
Priority Data:
Title (EN) WAFER ENCAPSULATION STRUCTURE AND ENCAPSULATION METHOD
(FR) STRUCTURE D'ENCAPSULATION DE TRANCHE ET PROCÉDÉ D'ENCAPSULATION
(ZH) 晶片封装结构及封装方法
Abstract:
(EN) Provided are a wafer encapsulation structure and encapsulation method. The wafer encapsulation structure comprises: a wafer (1), a carrier (2), an adhesive film (3) and a plastic encapsulation body (4), wherein the adhesive film (3) is disposed on a bottom surface of the wafer (1) and the thickness of the adhesive film (3) is greater than or equal to 40 microns; the wafer (1) is disposed on the carrier (2) via the adhesive film (3); and the plastic encapsulation body (4) is disposed on the carrier (2) and covers a top surface and a plurality of side surfaces of the wafer (1). The wafer encapsulation method is also provided. With regard to the prior art, the overall impact resistance capability of the wafer can be improved, and the structure of the carrier does not need to be changed, thus saving on die sinking costs; and the encapsulation structure is simple and can easily achieve mass production.
(FR) L'invention concerne une structure d'encapsulation de tranche et un procédé d'encapsulation. La structure d'encapsulation de tranche comprend : une tranche (1), un support (2), un film adhésif (3) et un corps d'encapsulation en plastique (4), le film adhésif (3) étant disposé sur une surface inférieure de la tranche (1) et l'épaisseur du film adhésif (3) étant supérieure ou égale à 40 microns; la tranche (1) étant disposée sur le support (2) par l'intermédiaire du film adhésif (3); et le corps d'encapsulation en plastique (4) étant disposé sur le support (2) et recouvrant une surface supérieure et une pluralité de surfaces latérales de la tranche (1). L'invention concerne également un procédé d'encapsulation de tranche. En ce qui concerne l'état de la technique, la capacité globale de résistance aux chocs de la tranche peut être améliorée, et la structure du support n'a pas besoin d'être changée, ce qui permet d'économiser des coûts de fabrication de matrice; et la structure d'encapsulation est simple et peut facilement réaliser une production de masse.
(ZH) 提供了一种晶片封装结构及封装方法。晶片封装结构包括:晶片(1)、载体(2)、粘结膜(3)以及塑封体(4);粘结膜(3)设置在晶片(1)的底面上,粘结膜(3)的厚度大于或等于40微米;晶片(1)通过粘结膜(3)设置在载体(2)上;塑封体(4)设置在载体(2)上,且包覆晶片(1)的顶面及多个侧面。还提供了一种晶片封装方法,现对于现有技术,可以提高晶片整体的抗冲击能力,而且无需改变载体的结构,省去开模的费用,且封装结构简单,易于量化生产。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)