Processing

Please wait...

Settings

Settings

Goto Application

1. WO2018137139 - MICRO-LED DEVICE, DISPLAY APPARATUS AND METHOD FOR MANUFACTURING A MICRO-LED DEVICE

Publication Number WO/2018/137139
Publication Date 02.08.2018
International Application No. PCT/CN2017/072483
International Filing Date 24.01.2017
IPC
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
H01L 27/153
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
H01L 33/385
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
385the electrode extending at least partially onto a side surface of the semiconductor body
H01L 33/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • GOERTEK. INC [CN]/[CN]
Inventors
  • ZOU, Quanbo
  • CHEN, Peixuan
  • FENG, Xiangxu
Agents
  • BEYOND TALENT PATENT AGENT FIRM
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) MICRO-LED DEVICE, DISPLAY APPARATUS AND METHOD FOR MANUFACTURING A MICRO-LED DEVICE
(FR) DISPOSITIF À MICRO-DEL, APPAREIL D'AFFICHAGE ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À MICRO-DEL
Abstract
(EN) A micro-LED device, a display apparatus and a method for manufacturing a micro-LED device. The micro-LED device comprises: a growth substrate (101); a plurality of vertical micro-LEDs formed on the growth substrate (101); a first type electrode (114) formed on top of each of the vertical micro-LEDs; and a second type electrode (108) formed on side surface of each of the vertical micro-LEDs. The fabrication thereof may be simplified.
(FR) L'invention concerne un dispositif à micro-DEL, un appareil d'affichage et un procédé de fabrication de dispositif à micro-DEL. Le dispositif à micro-DEL comprend : un substrat de croissance (101); une pluralité de micro-DEL verticales formées sur le substrat de croissance (101); une électrode de premier type (114) formée au-dessus de chacune des micro-DEL verticales; et une électrode de second type (108) formée sur la surface latérale de chacune des micro-DEL verticales. La fabrication de celui-ci peut être simplifiée.
Related patent documents
Latest bibliographic data on file with the International Bureau