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1. (WO2018136466) POST-ETCH RESIDUE REMOVAL FOR ADVANCED NODE BEOL PROCESSING

Pub. No.:    WO/2018/136466    International Application No.:    PCT/US2018/013970
Publication Date: Fri Jul 27 01:59:59 CEST 2018 International Filing Date: Thu Jan 18 00:59:59 CET 2018
IPC: C23G 1/24
C23G 1/20
H01L 21/02
H01L 21/768
C11D 11/00
G03F 7/42
C23G 1/18
C23G 1/26
C09K 13/08
Applicants: ENTEGRIS, INC.
Inventors: COOPER, Emanuel I.
PAYNE, Makonnen
KIM, WonLae
HONG, Eric
TU, Sheng-Hung
WANG, Chieh Ju
HSU, Wisma
Title: POST-ETCH RESIDUE REMOVAL FOR ADVANCED NODE BEOL PROCESSING
Abstract:
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.