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1. (WO2018136366) GAP FILLING DIELECTRIC MATERIALS
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Pub. No.: WO/2018/136366 International Application No.: PCT/US2018/013745
Publication Date: 26.07.2018 International Filing Date: 15.01.2018
IPC:
H01L 21/768 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
HONEYWELL INTERNATIONAL INC. [US/US]; Intellectual Property-Patent Services 115 Tabor Road, M/S 4D3 P. O. Box 377 Morris Plains, New Jersey 07950, US
Inventors:
PANDEY, Yamini; US
XU, Helen Xiao; US
KENNEDY, Joseph T.; US
Agent:
SZUCH, Colleen D.; US
Priority Data:
15/691,09630.08.2017US
62/448,48820.01.2017US
Title (EN) GAP FILLING DIELECTRIC MATERIALS
(FR) MATÉRIAUX DIÉLECTRIQUES DE REMPLISSAGE D'ENTREFER
Abstract:
(EN) A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.
(FR) L'invention concerne une composition pour planariser une surface de dispositif à semiconducteur comprenant une résine de poly(méthylsilsesquioxane), un sel d'ammonium quaternaire et /ou un sel d'aminopropyltriéthoxysilane, et au moins un solvant. La résine de poly(méthylsilsesquioxane) varie de 1 % en poids à 40 % en poids . En pourcentage de la composition. La résine de poly(méthylsilsesquioxane) a un poids moléculaire moyen en poids entre 500 Da et 5000 Da. Le sel d'ammonium quaternaire et/ou le sel d'aminopropyltriéthoxysilane varie de 0,01 % en poids à 0.20 % en poids. En pourcentage de la composition. L'au moins un solvant comprend le reste de la composition.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)