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1. (WO2018136366) GAP FILLING DIELECTRIC MATERIALS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/136366 International Application No.: PCT/US2018/013745
Publication Date: 26.07.2018 International Filing Date: 15.01.2018
IPC:
H01L 21/768 (2006.01) ,H01L 21/02 (2006.01)
Applicants: HONEYWELL INTERNATIONAL INC.[US/US]; Intellectual Property-Patent Services 115 Tabor Road, M/S 4D3 P. O. Box 377 Morris Plains, New Jersey 07950, US
Inventors: PANDEY, Yamini; US
XU, Helen Xiao; US
KENNEDY, Joseph T.; US
Agent: SZUCH, Colleen D.; US
Priority Data:
15/691,09630.08.2017US
62/448,48820.01.2017US
Title (EN) GAP FILLING DIELECTRIC MATERIALS
(FR) MATÉRIAUX DIÉLECTRIQUES DE REMPLISSAGE D'ENTREFER
Abstract: front page image
(EN) A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.
(FR) L'invention concerne une composition pour planariser une surface de dispositif à semiconducteur comprenant une résine de poly(méthylsilsesquioxane), un sel d'ammonium quaternaire et /ou un sel d'aminopropyltriéthoxysilane, et au moins un solvant. La résine de poly(méthylsilsesquioxane) varie de 1 % en poids à 40 % en poids . En pourcentage de la composition. La résine de poly(méthylsilsesquioxane) a un poids moléculaire moyen en poids entre 500 Da et 5000 Da. Le sel d'ammonium quaternaire et/ou le sel d'aminopropyltriéthoxysilane varie de 0,01 % en poids à 0.20 % en poids. En pourcentage de la composition. L'au moins un solvant comprend le reste de la composition.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)