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1. (WO2018135690) METHOD FOR PRODUCING LIGHT-EMITTING DIODE
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Pub. No.: WO/2018/135690 International Application No.: PCT/KR2017/001444
Publication Date: 26.07.2018 International Filing Date: 10.02.2017
IPC:
H01L 33/00 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/04 (2010.01)
[IPC code unknown for H01L 33][IPC code unknown for H01L 33/02][IPC code unknown for H01L 33/36][IPC code unknown for H01L 33/04]
Applicants:
경희대학교산학협력단 UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY [KR/KR]; 경기도 용인시 기흥구 덕영대로 1732 1732, Deogyeong-daero Giheung-gu, Yongin-si Gyeonggi-do 17104, KR
Inventors:
김진교 KIM, Chin Kyo; KR
장동수 JANG, Dong Soo; KR
주미연 JUE, Mi Yeon; KR
김화섭 KIM, Hwa Seob; KR
김동회 KIM, Dong Hoi; KR
Agent:
김연권 KIM, Youn Gwon; KR
Priority Data:
10-2017-001071423.01.2017KR
Title (EN) METHOD FOR PRODUCING LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE PRODUCTION D'UNE DIODE ÉLECTROLUMINESCENTE
(KO) 발광 소자의 제조 방법
Abstract:
(EN) The present invention provides a method for producing a light-emitting diode. The method for producing a light-emitting diode according to an embodiment of the present invention comprises: a step of forming a mask layer, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride (GaN), comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask layer, wherein the window region of the mask layer has a negative-type window pattern.
(FR) La présente invention concerne un procédé de production d'une diode électroluminescente. Le procédé de production d'une diode électroluminescente selon un mode de réalisation de la présente invention comprend : une étape de formation d'une couche de masque, comprenant au moins une région de fenêtre et au moins une région en saillie, sur un substrat de croissance; une étape de formation de nitrure de gallium (GaN), comprenant du nitrure de gallium polaire N et du nitrure de gallium polaire Ga, sur le substrat de croissance en soumettant du nitrure de gallium à une surcroissance latérale épitaxiale (ELOG); une étape de gravure sélective du nitrure de gallium polaire N; et une étape d'élimination de la couche de masque, la région de fenêtre de la couche de masque ayant un motif de fenêtre de type négatif.
(KO) 본 발명은 발광 소자의 제조 방법을 개시한다. 본 발명의 실시예에 따른 발광 소자의 제조 방법은 성장 기판 상에 적어도 하나의 윈도우 영역 및 돌출 영역을 포함하는 마스크층을 형성하는 단계; 상기 성장 기판 상에 질화 갈륨(GaN; gallium nitride)을 에피택셜 측면 오버그로스(ELOG; epitaxial lateral overgrowth)시켜, N-극성 질화 갈륨 및 Ga-극성 질화 갈륨을 포함하는 질화 갈륨을 형성하는 단계; 상기 N-극성 질화 갈륨을 선택적으로 식각하는 단계; 및 상기 마스크층을 제거하는 단계를 포함하고, 상기 마스크층의 상기 윈도우 영역은 네거티브 타입(negative type)의 윈도우 패턴을 갖는 것을 특징으로 한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)