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1. WO2018135492 - METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE AND DEVICE FOR PROCESSING SEMICONDUCTOR SUBSTRATE

Publication Number WO/2018/135492
Publication Date 26.07.2018
International Application No. PCT/JP2018/001025
International Filing Date 16.01.2018
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 清田 健司 KIYOTA, Kenji
  • 福岡 哲夫 FUKUOKA, Tetsuo
Agents
  • 特許業務法人弥生特許事務所 YAYOY PATENT OFFICE
Priority Data
2017-00955523.01.2017JP
2017-00958423.01.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE AND DEVICE FOR PROCESSING SEMICONDUCTOR SUBSTRATE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT SEMI-CONDUCTEUR ET DISPOSITIF PERMETTANT DE TRAITER UN SUBSTRAT SEMI-CONDUCTEUR
(JA) 半導体基板の処理方法及び半導体基板の処理装置
Abstract
(EN)
[Problem] To provide a technique by which it is possible to smooth a protective film when forming the protective film on a surface side (one side) before the step of reducing the thickness of a back surface side (the other side) of a semiconductor wafer on which an integrated circuit chip is formed. [Solution] Provided are: a module 51 that applies a curing agent 11 for peeling on a front surface side of a wafer W; a module 54 that cures the curing agent 11 via irradiation of ultraviolet rays; a module 52 that applies a curing agent 12 for a protective film on top of the curing agent 11; a module 56 that cures the curing agent 12 via irradiation of ultraviolet rays once the front surface of the curing agent has been pressed by a pressing member 14 comprising a glass plate; a device G that subsequently back grinds the wafer W; a module that bonds a dicing tape on the back surface side of the wafer W; and a module that subsequently irradiates laser light on the front surface side of the wafer W to alter the curing agent 11, generating gas, and peeling the curing agents 11, 12 from the wafer W.
(FR)
Le problème décrit par la présente invention est de fournir une technique selon laquelle il est possible de lisser un film protecteur lors de la formation du film protecteur sur un côté de surface (un côté) avant l'étape de réduction de l'épaisseur d'un côté de surface arrière (l'autre côté) d'une tranche de semi-conducteur sur laquelle un microcircuit intégré est formé. La solution selon l'invention porte sur : un module (51) appliquant un agent de durcissement (11) destiné au pelage d'un côté de surface avant d'une tranche (W) ; un module (54) durcissant l'agent de durcissement (11) par l'intermédiaire d'une exposition à des rayons ultraviolets ; un module (52) appliquant un agent de durcissement (12) destiné à un film protecteur situé sur l'agent de durcissement (11) ; un module (56) durcissant l'agent de durcissement (12) par l'intermédiaire d'une exposition à des rayons ultraviolets une fois que la surface avant de l'agent de durcissement a subi une compression par un élément de compression (14) comprenant une plaque de verre ; un dispositif (G) affûtant ensuite le dos de la tranche (W) ; un module liant une bande de découpage en dés sur le côté de surface arrière de la tranche (W) ; et un module exposant ensuite le côté de surface avant de la tranche (W) à de la lumière laser afin de modifier l'agent de durcissement (11), de générer du gaz et de peler les agents de durcissement (11, 12) de la tranche (W).
(JA)
【課題】集積回路チップが形成された半導体ウエハの裏面側(他面側)の厚さを小さくする工程の前に表面側(一面側)に保護膜を形成するにあたり、保護膜の平坦化を図ることができる技術を提供すること。 【解決手段】ウエハWの表面側に剥離用の硬化剤11を塗布するモジュール51、紫外線の照射により硬化剤11を硬化させるモジュール54、硬化剤11の上に保護膜用の硬化剤12を塗布するモジュール52、次にガラス板からなる押圧部材14により硬化剤の表面を押圧した状態で硬化剤12を紫外線の照射により硬化させるモジュール56、その後ウエハWをバックグラインドする装置G、ウエハWの裏面側にダイシング用テープを接着するモジュール、その後、ウエハWの表面側にレーザー光を照射して硬化剤11を変質させ、気体を発生させて硬化剤11、12をウエハWから剥離するモジュールを備える。
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