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1. (WO2018135226) SEMICONDUCTOR WAFER CLEANING METHOD
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Pub. No.: WO/2018/135226 International Application No.: PCT/JP2017/045831
Publication Date: 26.07.2018 International Filing Date: 20.12.2017
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO.,LTD. [JP/JP]; 東京都千代田区大手町二丁目2番1号 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
五十嵐 健作 IGARASHI Kensaku; JP
阿部 達夫 ABE Tatsuo; JP
Agent:
好宮 幹夫 YOSHIMIYA Mikio; JP
小林 俊弘 KOBAYASHI Toshihiro; JP
Priority Data:
2017-00929523.01.2017JP
Title (EN) SEMICONDUCTOR WAFER CLEANING METHOD
(FR) PROCÉDÉ DE NETTOYAGE DE TRANCHE DE SEMI-CONDUCTEUR
(JA) 半導体ウェーハの洗浄方法
Abstract:
(EN) This semiconductor wafer cleaning method for supplying, on a semiconductor wafer having an oxide film formed on the surface thereof, a cleaning solution capable of removing the oxide film, and removing the oxide film formed on the surface of the semiconductor wafer by cleaning the semiconductor wafer while rotating the same. The semiconductor wafer cleaning method is characterized in that the removal of the oxide film is conducted by setting the rotational speed of the semiconductor wafer to 300 rpm or higher from the start of the cleaning with the cleaning solution until a water-repellent surface emerges, and changing the rotational speed of the semiconductor wafer to 100 rpm or lower to completely remove the oxide film. Thus, provided is a semiconductor wafer cleaning method that can simultaneously achieve both improvement of surface roughness and suppression of surface defects.
(FR) Ce procédé de nettoyage de tranche de semi-conducteur pour fournir, sur une tranche de semi-conducteur sur la surface de laquelle est formé un film d'oxyde, une solution de nettoyage capable de retirer le film d'oxyde, et pour retirer le film d'oxyde formé sur la surface de la tranche de semi-conducteur par nettoyage de la tranche de semi-conducteur tout en tournant celle-ci. Le procédé de nettoyage de tranche de semi-conducteur est caractérisé en ce que le retrait du film d'oxyde est effectué en réglant la vitesse de rotation de la tranche de semi-conducteur sur une vitesse supérieure ou égale à 300 tours/minute du début du nettoyage avec la solution de nettoyage jusqu'à ce qu'une surface hydrofuge émerge, et en changeant la vitesse de rotation de la tranche de semi-conducteur sur une vitesse inférieure ou égale à 100 tours/minute pour retirer complètement le film d'oxyde. Ainsi, l'invention concerne un procédé de nettoyage de tranche de semi-conducteur qui permet d'obtenir simultanément à la fois l'amélioration de la rugosité de surface et la suppression de défauts de surface.
(JA) 本発明は、表面に酸化膜が形成された半導体ウェーハに、前記酸化膜を除去可能な洗浄液を供給し、前記半導体ウェーハを回転させながら洗浄を行うことにより、前記半導体ウェーハの表面に形成された酸化膜を除去する半導体ウェーハの洗浄方法であって、前記酸化膜の除去を、前記洗浄液での洗浄開始から撥水面が出る前まで前記半導体ウェーハの回転速度を300rpm以上として行い、その後前記半導体ウェーハの回転速度を100rpm以下に切り替えて前記酸化膜を完全に除去することで行うことを特徴とする半導体ウェーハの洗浄方法である。これにより、表面粗さの改善及び表面欠陥の抑制を両立することが可能な半導体ウェーハの洗浄方法が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)