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1. WO2018135159 - THREE-LEVEL INVERTER

Publication Number WO/2018/135159
Publication Date 26.07.2018
International Application No. PCT/JP2017/043527
International Filing Date 04.12.2017
IPC
H02M 7/487 2007.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42Conversion of dc power input into ac power output without possibility of reversal
44by static converters
48using discharge tubes with control electrode or semiconductor devices with control electrode
483Converters with outputs that each can have more than two voltage levels
487Neutral point clamped inverters
CPC
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
H02M 1/00
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
H02M 1/0051
H02M 1/34
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
32Means for protecting converters other than automatic disconnection
34Snubber circuits
H02M 1/346
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 陳 ▲爽▼清 CHIN, Sousei
Agents
  • 星野 裕司 HOSHINO, Hiroshi
Priority Data
2017-00712818.01.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THREE-LEVEL INVERTER
(FR) ONDULEUR À TROIS NIVEAUX
(JA) 3レベル・インバータ
Abstract
(EN)
The present invention facilitates further reduction of losses in a three-level inverter in which a unipolar diode is used as a reflux diode. This three-level inverter is provided with: a first semiconductor switching element disposed between a direct-current high potential terminal and an alternating-current output terminal; a second semiconductor switching element disposed between a direct-current low potential terminal, which is paired with the direct-current high potential terminal, and the alternating-current output terminal; first and second reflux diodes that are disposed reverse-parallelly with the first and second semiconductor switching elements, respectively; and a semiconductor circuit which controls gate voltages of the first and second semiconductor switching elements by selectively applying thereto a direct-current intermediate voltage which is given to a direct-current intermediate potential terminal. In particular, inductance elements are connected in series to the first and second reflux diodes so as to increase the circuit impedances through the first and second reflux diodes.
(FR)
La présente invention permet une réduction supplémentaire des pertes dans un onduleur à trois niveaux dans lequel une diode unipolaire est utilisée en tant que diode de reflux. Ledit onduleur à trois niveaux est pourvu : d'un premier élément de commutation à semi-conducteurs disposé entre une borne haute tension à courant continu et une borne de sortie de courant alternatif ; un second élément de commutation à semi-conducteurs disposé entre une borne basse tension à courant continu, qui est appariée à la borne haute tension à courant continu, et la borne de sortie de courant alternatif ; des première et seconde diodes de reflux qui sont respectivement disposées en parallèle inverse avec les premier et second éléments de commutation à semi-conducteurs ; et un circuit à semi-conducteurs commandant les tensions de grille des premier et second éléments de commutation à semi-conducteurs par application sélective d'une tension intermédiaire de courant continu qui est donnée à une borne moyenne tension à courant continu. En particulier, des éléments d'inductance sont connectés en série aux première et seconde diodes de reflux de façon à augmenter les impédances de circuit à travers les première et seconde diodes de reflux.
(JA)
還流ダイオードとしてユニポーラ・ダイオードを用いた3レベル・のインバータの更なる低損失化を図る。直流高電位端子と交流出力端子との間に設けた第1の半導体スイッチング素子と、直流高電位端子と対をなす直流低電位端子と前記交流出力端子との間に設けた第2の半導体スイッチング素子と、前記第1および第2の半導体スイッチング素子にそれぞれ逆並列に設けた第1および第2の還流ダイオードと、直流中間電位端子に与えられる直流中間電圧を前記第1および第2の半導体スイッチング素子に選択的に加えて前記第1および第2の半導体スイッチング素子のゲート電圧を制御する半導体回路とを備える。特に前記第1および第2の還流ダイオードにインダクタンス素子をそれぞれ直列に接続して前記第1および第2の還流ダイオードを経由する回路インピーダンスを高める。
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