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|1. (WO2018135144) METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
|Applicants:||HITACHI CHEMICAL COMPANY, LTD.
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
|Title:||METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
Provided is a method for producing hydrogen gas that makes it possible to easily obtain a large amount of highly pure hydrogen gas. This method for producing hydrogen gas is provided with a light irradiation step in which the surface of a metal member 100 immersed in water 2 is irradiated with light L, and gas including hydrogen is thereby generated. The metal member 100 comprises a first member containing a first metal, and a second member containing a second metal. The standard electrode potential of the first metal is higher than -2.00 V. The standard electrode potential of the second metal is higher than -2.00 V. The first member and the second member are electrically connected. At least one of an oxide and a hydroxide is formed on the surface of the metal member 100 as said gas is generated. The oxide is an oxide of at least one of the first metal and the second metal. The hydroxide is a hydroxide of at least one of the first metal and the second metal.