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1. (WO2018135144) METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/135144    International Application No.:    PCT/JP2017/042879
Publication Date: Fri Jul 27 01:59:59 CEST 2018 International Filing Date: Thu Nov 30 00:59:59 CET 2017
IPC: C01B 3/04
C25B 1/04
C25B 11/04
C25B 11/06
H01L 31/0256
H01L 31/072
Applicants: HITACHI CHEMICAL COMPANY, LTD.
日立化成株式会社
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
国立大学法人北海道大学
Inventors: ADACHI Shuichiro
足立 修一郎
KITAGAWA Masaki
北川 雅規
WATANABE Seiichi
渡辺 精一
JEEM Melbert
ジェーム メルバート
NISHINO Fumika
西野 史香
TAKAHASHI Yuki
▲高▼橋 優樹
Title: METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Abstract:
Provided is a method for producing hydrogen gas that makes it possible to easily obtain a large amount of highly pure hydrogen gas. This method for producing hydrogen gas is provided with a light irradiation step in which the surface of a metal member 100 immersed in water 2 is irradiated with light L, and gas including hydrogen is thereby generated. The metal member 100 comprises a first member containing a first metal, and a second member containing a second metal. The standard electrode potential of the first metal is higher than -2.00 V. The standard electrode potential of the second metal is higher than -2.00 V. The first member and the second member are electrically connected. At least one of an oxide and a hydroxide is formed on the surface of the metal member 100 as said gas is generated. The oxide is an oxide of at least one of the first metal and the second metal. The hydroxide is a hydroxide of at least one of the first metal and the second metal.