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1. WO2018134699 - INTEGRATION OF CONFINED PHASE CHANGE MEMORY WITH THRESHOLD SWITCHING MATERIAL

Publication Number WO/2018/134699
Publication Date 26.07.2018
International Application No. PCT/IB2018/050130
International Filing Date 09.01.2018
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
H01L 21/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
CPC
H01L 27/2409
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
H01L 27/2427
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
2427of the Ovonic threshold switching type
H01L 27/2481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
2481arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays, details of the vertical layout
H01L 45/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
06based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H01L 45/1233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
122Device geometry
1233adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H01L 45/1293
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
128Thermal details
1293Thermal insulation means
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] (MG)
  • IBM (CHINA) INVESTMENT COMPANY LIMITED [CN]/[CN] (MG)
Inventors
  • KIM, Wanki
  • LAM, Chung, Hon
  • BRUCE, Robert
  • CARTA, Fabio
Agents
  • LITHERLAND, David
Priority Data
15/408,39217.01.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATION OF CONFINED PHASE CHANGE MEMORY WITH THRESHOLD SWITCHING MATERIAL
(FR) INTÉGRATION D'UNE MÉMOIRE À CHANGEMENT DE PHASE CONFINÉE AVEC UN MATÉRIAU DE COMMUTATION DE SEUIL
Abstract
(EN)
A phase change memory array and method for fabricating the same. The phase change memory array includes a plurality of bottom electrodes, top electrodes, and memory pillars. Each of the memory pillars includes phase change material surrounded by a dielectric casing. The phase change material is positioned between, and in series circuit with, a respective bottom electrode from the bottom electrodes and a respective top electrode from the top electrodes. A continuous layer of selector material is positioned between the memory pillars and the plurality of bottom electrodes. The selector material is configured to conduct electricity only when a voltage across the selector material exceeds a voltage threshold.
(FR)
L'invention concerne une matrice mémoire à changement de phase et son procédé de fabrication. La matrice mémoire à changement de phase comprend une pluralité d'électrodes inférieures, d'électrodes supérieures et de piliers de mémoire. Chacun des piliers de mémoire comprend un matériau à changement de phase entouré par un boîtier diélectrique. Le matériau à changement de phase est positionné entre, et en série avec, une électrode inférieure respective parmi les électrodes inférieures et une électrode supérieure respective parmi les électrodes supérieures. Une couche continue de matériau sélecteur est positionnée entre les piliers de mémoire et la pluralité d'électrodes inférieures. Le matériau sélecteur est configuré pour conduire de l'électricité uniquement lorsqu'une tension à travers le matériau sélecteur dépasse un seuil de tension.
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