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1. (WO2018133093) METHODS OF MAKING SEMICONDUCTOR X-RAY DETECTOR

Pub. No.:    WO/2018/133093    International Application No.:    PCT/CN2017/072184
Publication Date: Fri Jul 27 01:59:59 CEST 2018 International Filing Date: Tue Jan 24 00:59:59 CET 2017
IPC: G01T 1/24
Applicants: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
Inventors: CAO, Peiyan
SONG, Chongshen
LIU, Yurun
Title: METHODS OF MAKING SEMICONDUCTOR X-RAY DETECTOR
Abstract:
An image sensor (9000) comprising: one or more packages of semiconductor radiation detectors;wherein each of the one or more packages comprises a radiation detector (100), wherein the radiation detector (100) comprises a radiation absorption layer (110) on a first strip (908) of semiconductor wafer (906) and an electronics layer (120) on a second strip (903) of semiconductor wafer (902), wherein the radiation absorption layer (110) is continuous along the first strip (908) of semiconductor wafer (906) with no coverage gap, wherein the first strip (908) and the second strip (903) are longitudinally aligned and bonded together. The x-ray imaging quality is improved.