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1. WO2018131227 - SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING SAME, AND OPTICAL PHASE MODULATOR

Publication Number WO/2018/131227
Publication Date 19.07.2018
International Application No. PCT/JP2017/035811
International Filing Date 02.10.2017
IPC
H01S 5/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02-H01S5/30100
G02F 1/017 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
CPC
G02F 1/017
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02F 1/01708
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
01708in an optical wavequide structure
G02F 2201/063
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2201Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
06integrated waveguide
063ridge; rib; strip loaded
G02F 2202/102
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2202Materials and properties
10semiconductor
102In×P and alloy
G02F 2202/108
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2202Materials and properties
10semiconductor
108quantum wells
G02F 2203/50
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2203Function characteristic
50Phase-only modulation
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 西川 智志 NISHIKAWA Satoshi
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi
  • 有田 貴弘 ARITA Takahiro
Priority Data
2017-00166910.01.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING SAME, AND OPTICAL PHASE MODULATOR
(FR) AMPLIFICATEUR OPTIQUE À SEMICONDUCTEUR, SON PROCÉDÉ DE FABRICATION, ET MODULATEUR DE PHASE OPTIQUE
(JA) 半導体光増幅器およびその製造方法、光位相変調器
Abstract
(EN)
The present invention relates to a semiconductor optical amplifier provided with: a plurality of optical amplification regions arrayed in series; a passive waveguide region disposed between the optical amplification regions; and first and second electrodes disposed on upper surfaces of the optical amplification regions. The passive waveguide region provides electrical insulation between the first electrodes and between the second electrodes of adjacent optical amplification regions, while optically connecting the adjacent optical amplification regions. The semiconductor optical amplifier electrically connects the first electrode and the second electrode of the adjacent optical amplification regions, whereby the plurality of optical amplification regions are electrically connected in a cascade connection, and the plurality of optical amplification regions are driven by means of electrical power supply to the optical amplification regions at the ends of the array of the plurality of optical amplification regions.
(FR)
La présente invention concerne un amplificateur optique à semiconducteur comprenant : une pluralité de régions d'amplification optique disposées en série; une région de guide d'ondes passif disposée entre les régions d'amplification optique; et des première et seconde électrodes disposées sur des surfaces supérieures des régions d'amplification optique. La région de guide d'ondes passif assure une isolation électrique entre les premières électrodes et entre les secondes électrodes de régions d'amplification optique adjacentes, tout en connectant optiquement les régions d'amplification optique adjacentes. L'amplificateur optique à semiconducteur connecte électriquement la première électrode et la seconde électrode des régions d'amplification optique adjacentes, la pluralité de régions d'amplification optique étant électriquement connectées dans une connexion en cascade, et la pluralité de régions d'amplification optique sont commandées au moyen d'une alimentation électrique aux régions d'amplification optique au niveau des extrémités du réseau de la pluralité de régions d'amplification optique.
(JA)
本発明は半導体光増幅器に関し、直列に配列された複数の光増幅領域と、光増幅領域の間に設けられた受動導波路領域と、光増幅領域の上面に設けられた第1および第2電極とを備え、受動導波路領域は、隣り合う光増幅領域の第1電極間および第2電極間を電気的に絶縁し、かつ隣り合う光増幅領域の間を光学的に接続し、半導体光増幅器は、隣り合う光増幅領域の第1電極と第2電極との間を電気的に接続することで、複数の光増幅領域が電気的に縦続接続され、複数の光増幅領域の配列の両端の光増幅領域への給電により複数の光増幅領域を駆動する。
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