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1. WO2018131216 - INFRARED SENSOR SUBSTRATE AND INFRARED SENSOR DEVICE

Publication Number WO/2018/131216
Publication Date 19.07.2018
International Application No. PCT/JP2017/034113
International Filing Date 21.09.2017
IPC
H01L 27/144 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
G01J 1/02 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
02Details
G01J 1/42 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
42using electric radiation detectors
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/33 2006.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
33Transforming infra-red radiation
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
G01J 2005/123
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
12using thermoelectric elements, e.g. thermocouples
123Thermoelectric array
H01L 27/1462
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/14649
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
H01L 27/1465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
1465of the hybrid type
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 藤澤 大介 FUJISAWA, Daisuke
  • 中西 淳治 NAKANISHI, Junji
  • 大中道 崇浩 ONAKADO, Takahiro
Agents
  • 鮫島 睦 SAMEJIMA, Mutsumi
  • 山田 卓二 YAMADA, Takuji
Priority Data
2017-00359312.01.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) INFRARED SENSOR SUBSTRATE AND INFRARED SENSOR DEVICE
(FR) SUBSTRAT DE CAPTEUR INFRAROUGE ET DISPOSITIF DE CAPTEUR INFRAROUGE
(JA) 赤外線センサ基板及び赤外線センサデバイス
Abstract
(EN)
An infrared sensor substrate (10) is provided with a plurality of column signal lines (101), a plurality of row signal lines (102), and a pixel array of a plurality of pixels (12) including infrared detection elements (100) connected to the column signal lines (101) and the row signal lines (102). The infrared sensor substrate (10) is provided with: a current source (105) connected to the infrared detection elements (100) via the column signal lines (101); a voltage source (107, 108) for supplying a voltage to the infrared detection elements (100) via the row signal lines (102); and a plurality of output terminals (111) which are connected to the column signal lines (101) and connectable to a signal processing circuit substrate (20) for processing output signals from the infrared detection elements (100). The infrared sensor substrate (10) is provided with a monitoring terminal (113) enabling monitoring of the voltage applied by the voltage source (107, 108) to the infrared detection elements (100).
(FR)
Un substrat de capteur infrarouge (10) est pourvu d'une pluralité de lignes de signal de colonne (101), d'une pluralité de lignes de signal de rangée (102), et d'un réseau de pixels d'une pluralité de pixels (12) comprenant des éléments de détection infrarouge (100) connectés aux lignes de signal de colonne (101) et aux lignes de signal de rangée (102). Le substrat de capteur infrarouge (10) comprend : une source de courant (105) connectée aux éléments de détection infrarouge (100) par l'intermédiaire des lignes de signal de colonne (101) ; une source de tension (107, 108) permettant de fournir une tension aux éléments de détection infrarouge (100) par l'intermédiaire des lignes de signal de rangée (102) ; et une pluralité de bornes de sortie (111) qui sont connectées aux lignes de signal de colonne (101) et qui peuvent être connectées à un substrat de circuit de traitement de signaux (20) pour traiter des signaux de sortie provenant des éléments de détection infrarouge (100). Le substrat de capteur infrarouge (10) est pourvu d'un terminal de surveillance (113) permettant la surveillance de la tension appliquée par la source de tension (107, 108) aux éléments de détection infrarouge (100).
(JA)
赤外線センサ基板(10)は、複数の列信号線(101)と、複数の行信号線(102)と、列信号線(101)及び行信号線(102)に接続された赤外線検出素子(100)を含む複数の画素(12)の画素アレイとを備える。赤外線センサ基板(10)は、各列信号線(101)を介して各赤外線検出素子(100)に接続された電流源(105)と、各行信号線(102)を介して各赤外線検出素子(100)に電圧を印加する電圧源(107,108)と、列信号線(101)に接続され、各赤外線検出素子(100)の出力信号を処理する信号処理回路基板(20)に接続可能である複数の出力端子(111)とを備える。赤外線センサ基板(10)は、電圧源(107,108)により各赤外線検出素子(100)に印加される電圧をモニタリング可能なモニタリング端子(113)を備える。
Also published as
EP2017891929
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