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1. WO2018131170 - STRAIN RESISTANCE ELEMENT, MECHANICAL QUANTITY DETECTION SENSOR, AND MICROPHONE

Publication Number WO/2018/131170
Publication Date 19.07.2018
International Application No. PCT/JP2017/001285
International Filing Date 16.01.2017
IPC
H01L 29/84 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
84controllable by variation of applied mechanical force, e.g. of pressure
G01L 9/00 2006.01
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H01L 41/113 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
113with mechanical input and electrical output
CPC
G01L 9/00
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements
H01L 29/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
84controllable by variation of applied mechanical force, e.g. of pressure
H01L 41/113
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
113with mechanical input and electrical output ; , e.g. generators, sensors
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 野村 雅信 NOMURA, Masanobu
  • 芳井 義治 YOSHII, Yoshiharu
Agents
  • 河本 尚志 KAWAMOTO, Takashi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) STRAIN RESISTANCE ELEMENT, MECHANICAL QUANTITY DETECTION SENSOR, AND MICROPHONE
(FR) ÉLÉMENT RÉSISTANT À LA CONTRAINTE, CAPTEUR DE DÉTECTION DE QUANTITÉ MÉCANIQUE ET MICROPHONE
(JA) 歪抵抗素子、力学量検知センサおよびマイクロフォン
Abstract
(EN)
Provided is a strain resistance element exhibiting high detection accuracy. A strain resistance element, wherein voltage-resistance properties which represent a change in the resistance value between a first electrode 3 and a second electrode 4 relative to a change in the voltage value of a third electrode 6 have a region which changes exponentially, and the range inside this region which changes exponentially or inside and near this region which changes exponentially is the region used to detect the size of the strain. In addition, the spatial region where the Fermi level fluctuates reaches the floor section of a semiconductor 2 in the region used to detect the size of the strain.
(FR)
L'invention concerne un élément résistant à la contrainte présentant une grande précision de détection. Dans l'élément résistant à la contrainte de la présente invention, des propriétés de résistance à la tension qui représentent une variation de la valeur de résistance entre une première électrode (3) et une deuxième électrode (4) par rapport à une variation de la valeur de tension d'une troisième électrode (6) présentent une région qui change exponentiellement, et la plage dans cette région qui change exponentiellement ou dans cette région et à proximité de cette dernière qui change exponentiellement est la région servant à la détection de la taille de la contrainte. De plus, la région d'espace où le niveau de Fermi fluctue atteint la section de fond d'un semi-conducteur (2) dans la région servant à la détection de la taille de la contrainte.
(JA)
検出精度の高い歪抵抗素子を提供する。 第3電極6の電圧値の変化に対する、第1電極3と第2電極4との間の抵抗値の変化を示す、電圧‐抵抗特性が、指数関数的に変化する領域を有し、指数関数的に変化する領域の内側、または、指数関数的に変化する領域の内側および近傍を、歪の大きさを検出するのに使用する領域にする。また、フェルミ準位が変動する空間的領域が歪の大きさを検出するのに使用する領域において半導体2の底部に達するようにする。
Also published as
JP2018561781
Latest bibliographic data on file with the International Bureau