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1. (WO2018130954) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/130954 International Application No.: PCT/IB2018/050160
Publication Date: 19.07.2018 International Filing Date: 11.01.2018
IPC:
G09G 3/36 (2006.01) ,G02F 1/133 (2006.01) ,G09G 3/20 (2006.01) ,G09G 3/30 (2006.01) ,G09G 3/3258 (2016.01) ,G11C 19/28 (2006.01) ,H01L 21/8234 (2006.01) ,H01L 27/088 (2006.01) ,H01L 27/32 (2006.01) ,H01L 29/786 (2006.01) ,H01L 51/50 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20
for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
34
by control of light from an independent source
36
using liquid crystals
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20
for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20
for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
22
using controlled light sources
30
using electroluminescent panels
[IPC code unknown for G09G 3/3258]
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
28
using semiconductor elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants:
株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 神奈川県厚木市長谷398 398, Hase Atsugi-Shi, Kanagawa 2430036, JP
Inventors:
黒川義元 KUROKAWA, Yoshiyuki; JP
Priority Data:
2017-00487116.01.2017JP
2017-00487216.01.2017JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置
Abstract:
(EN) Provided is a novel semiconductor device. The semiconductor device has a function whereby the pixel selection intervals are changed according to the distance from a drive circuit. Specifically, if the distance between a first pixel and the drive circuit is longer than the distance between a second pixel and the drive circuit, the pulse width of the selection signals supplied to the first pixel is set so as to be greater than the pulse width of the selection signals supplied to the second pixel. As a result, it is possible accurately write image signals to pixels provided at positions far from the drive circuit while also maintaining a short selection interval for pixels provided at positions close to the drive circuit.
(FR) L’invention concerne un nouveau dispositif à semi-conducteurs. Une fonction du dispositif à semi-conducteurs permet de changer les intervalles de sélection de pixel en fonction de la distance à un circuit d'attaque. En particulier, si la distance entre un premier pixel et le circuit d'attaque est supérieure à la distance entre un second pixel et le circuit d'attaque, la largeur d'impulsion des signaux de sélection fournis au premier pixel est réglée de manière à être supérieure à la largeur d'impulsion des signaux de sélection fournis au second pixel. Par conséquent, il est possible d'écrire avec précision des signaux d'image sur des pixels disposés à des positions éloignées du circuit d'attaque tout en maintenant un intervalle de sélection court pour des pixels disposés à des positions proches du circuit d'attaque.
(JA) 新規な半導体装置の提供。 半導体装置が、画素の選択期間を、駆動回路からの距離に応じて変化させる機能を有する。具体的には、第1の画素と駆動回路の距離が、第2の画素と駆動回路の距離よりも長い場合に、第1の画素に供給される選択信号のパルス幅が、第2の画素に供給される選択信号のパルス幅よりも大きく設定される。これにより、駆動回路から近い位置に設けられた画素の選択期間を短く維持しつつ、駆動回路から遠い位置に設けられた画素への映像信号の書き込みを正確に行うことができる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)