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1. WO2018130462 - VERTICAL-CAVITY SURFACE-EMITTING LASER

Publication Number WO/2018/130462
Publication Date 19.07.2018
International Application No. PCT/EP2018/050238
International Filing Date 05.01.2018
IPC
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
CPC
H01S 2301/176
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
17Semiconductor lasers comprising special layers
176Specific passivation layers on surfaces other than the emission facet
H01S 2304/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2304Special growth methods for semiconductor lasers
H01S 5/0282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings ; ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
0282Passivation layers or treatments
H01S 5/06226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
06226Modulation at ultra-high frequencies
H01S 5/18361
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18361Structure of the reflectors, e.g. hybrid mirrors
Applicants
  • TECHNISCHE UNIVERSITÄT BERLIN [DE]/[DE]
Inventors
  • BIMBERG, Dieter
  • LARISCH, Gunter
  • LOTT, James A.
Agents
  • FISCHER, Uwe
Priority Data
15/404,78612.01.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) VERTICAL-CAVITY SURFACE-EMITTING LASER
(FR) LASER À CAVITÉ VERTICALE À ÉMISSION PAR LA SURFACE
Abstract
(EN)
An embodiment of the invention relates to a vertical cavity surface emitting laser comprising a first reflector, a second reflector comprising a layer stack of semiconductor or isolating layers, an active region arranged between the first and second reflectors, and an additional layer on top of the layer stack at the light output side, said additional layer forming an output interface of the laser, wherein the refractive index of the additional layer is smaller, equal to or larger than the smallest refractive index of the refractive indices of said layer stack.
(FR)
L'invention, selon un mode de réalisation, concerne un laser à cavité verticale à émission par la surface comprenant un premier réflecteur, un second réflecteur comprenant un empilement de couches de couches semi-conductrices ou isolantes, une région active disposée entre les premier et second réflecteurs, et une couche supplémentaire située au-dessus de l'empilement de couches du côté sortie de lumière, ladite couche supplémentaire formant une interface de sortie du laser, l'indice de réfraction de la couche supplémentaire étant inférieur, égal ou supérieur à l'indice de réfraction le plus bas parmi les indices de réfraction des couches dudit empilement de couches.
Also published as
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