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1. WO2018130077 - PROCESS FOR INGOT CASTING, MELTING, AND CRYSTALLIZATION OF POLYSILICON SEED CRYSTAL IN BUFFERED FASHION

Publication Number WO/2018/130077
Publication Date 19.07.2018
International Application No. PCT/CN2017/119316
International Filing Date 28.12.2017
IPC
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 28/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
28Production of homogeneous polycrystalline material with defined structure
04from liquids
06by normal freezing or freezing under temperature gradient
CPC
C30B 28/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
28Production of homogeneous polycrystalline material with defined structure
04from liquids
06by normal freezing or freezing under temperature gradient
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • 南通大学 NANTONG UNIVERSITY [CN]/[CN]
Inventors
  • 王强 WANG, Qiang
  • 林凡 LIN, Fan
  • 邓洁 DENG, Jie
  • 陈云 CHEN, Yun
  • 朱海峰 ZHU, Haifeng
  • 章国安 ZHANG, Guoan
Agents
  • 北京轻创知识产权代理有限公司 KEYCOM PARTNERS, P.C.
Priority Data
201710019711.712.01.2017CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PROCESS FOR INGOT CASTING, MELTING, AND CRYSTALLIZATION OF POLYSILICON SEED CRYSTAL IN BUFFERED FASHION
(FR) PROCÉDÉ DE COULÉE DE LINGOT, DE FUSION ET DE CRISTALLISATION DE GERMES CRISTALLINS DE POLYSILICIUM EN MODE TAMPONNÉ
(ZH) 一种缓冲式多晶硅籽晶铸锭熔化结晶工艺
Abstract
(EN)
Disclosed is a process for ingot casting, melting, and crystallization of a polysilicon seed crystal in buffered fashion. The process comprises the following steps: (1) a loading stage of a polysilicon seed crystal; (2) an ingot casting and melting stage of the polysilicon seed crystal; and (3) a crystal growth stage of the polysilicon seed crystal. The present invention explores a process for manufacturing a low defect density silicon ingot by studying cooling rate processes of different silicon ingots. Moreover, the invention reduces the influence of local over-melting of a seed crystal layer on the performance of a silicon ingot, reduces the size of red zone of the silicon ingot, and reduces the production cost of a silicon wafer.
(FR)
L'invention concerne un procédé de coulée de lingot, de fusion et de cristallisation de germes cristallins de polysilicium en mode tamponné. Le procédé comprend les étapes suivantes : (1) une étape de chargement de germes cristallins de polysilicium; (2) une étape de coulée de lingot et de fusion des germes cristallins de polysilicium; et (3) une étape de croissance cristalline des germes cristallins de polysilicium. La présente invention explore un procédé de fabrication d'un lingot de silicium à faible densité de défauts par l'étude de processus de vitesse de refroidissement de différents lingots de silicium. En outre, l'invention réduit l'influence de la surfusion locale d'une couche de germes cristallins sur les performances d'un lingot de silicium, réduit la taille de la zone rouge du lingot de silicium, et réduit le coût de production d'une tranche de silicium.
(ZH)
本发明公开了一种缓冲式多晶硅籽晶铸锭熔化结晶工艺,包括如下步骤:(1)多晶硅籽晶装料阶段;(2)多晶硅籽晶铸锭熔化阶段;(3)多晶硅籽晶长晶阶段。本发明通过对不同硅锭降温速率工艺进行了研究,探索了低缺陷密度硅锭制备工艺。同时,为了减少籽晶层局部过熔对硅锭性能的影响,减少硅锭的红区体积,降低硅片生产成本。
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