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1. (WO2018129141) CRYSTAL PULLING SYSTEM AND METHOD INCLUDING CRUCIBLE AND CONDITIONING MEMBERS
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Pub. No.: WO/2018/129141 International Application No.: PCT/US2018/012320
Publication Date: 12.07.2018 International Filing Date: 04.01.2018
IPC:
C30B 15/00 (2006.01) ,C30B 15/12 (2006.01) ,C30B 29/06 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
12
Double crucible methods
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
CORNER STAR LIMITED [CN/CN]; International Commerce Centre 1 Austin Road West Unit 1703B-1706, Level 17 Kowloon, HK
Inventors:
ZEPEDA, Salvador; US
PHILLIPS, Richard J.; US
LUERS, Christopher Vaughn; US
KIMBEL, Steven Lawrence; US
KORB, Harold W.; US
HOLDER, John D.; US
HUDSON, Carissima M.; US
SREEDHARAMURTHY, Hariprasad; US
HARINGER, Stephan; IT
ZARDONI, Marco; IT
Agent:
MUNSELL, Michael G.; US
BUTLER, Christopher H.; US
POLAND, Eric G.; US
SCHUTH, Richard A.; US
VANDER MOLEN, Michael J.; US
KEPPEL, Nicholas A.; US
ALLEN, Derick E.; US
AMODIO, Lucas M.; US
ATKINS, Bruce T.; US
BEULICK, John S.; US
BLOCK, Zachary J.; US
BRENNAN, Patrick E.; US
BROPHY, Richard L.; US
COYLE, Patrick J.; US
FITZGERALD, Daniel M.; US
FLOREK, Erin M.; US
GOFF, Christopher M.; US
HARPER, James D.; US
HARPER, Jesse S.; US
HEINEN JR., James M.; US
HENSON, James W.; US
HILMERT, Laura J.; US
HOEKEL, Jennifer E.; US
LONGMEYER, Michael H.; US
MUELLER, Jacob R.; US
RASCHE, Patrick W.; US
REESER III, Robert B.; US
SLATER, Brian T.; US
SMELCER, Paul L.; US
SNIDER, Josh C.; US
SOOTER, Miranda M.; US
THOMAS, Mark A.; US
VANVLIET, David S.; US
WULLER, Adam R.; US
ZEE-CHENG, Brendan R.; US
ZYCHLEWICZ, William J.; US
MCCAY, Michael G.; US
MOLLER-JACOBS, Rose L.; US
VANENGELEN, Catherine E.; US
SCHNIEDERS, Kelley A.; US
TRUITT, Tracey S.; US
INACAY, Brian D.; US
BACOCH, John C.; US
KU, Deborah S.; US
Priority Data:
15/398,40704.01.2017US
Title (EN) CRYSTAL PULLING SYSTEM AND METHOD INCLUDING CRUCIBLE AND CONDITIONING MEMBERS
(FR) SYSTÈME ET PROCÉDÉ DE TIRAGE DE CRISTAL COMPRENANT UN CREUSET ET DES ÉLÉMENTS DE CONDITIONNEMENT
Abstract:
(EN) Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.
(FR) L'invention concerne des systèmes et des procédés de formation d'un lingot à partir d'une masse fondue. Un système comprend un creuset définissant une cavité pour recevoir la matière fondue, et une première et une seconde barrière pour empêcher le déplacement de la matière fondue. Un premier passage et un second passage sont agencés pour permettre à la matière fondue située à l'intérieur d'une zone externe de se déplacer dans et à travers une zone de transition et dans une zone interne. Des éléments de conditionnement sont placés dans au moins l'une des zones et agencés de manière à entrer en contact avec la masse fondue pour réduire le nombre de micro-vides dans la masse fondue.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)