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1. (WO2018128858) GROUNDING SCHEME FOR POWER CONVERTERS WITH SILICON CARBIDE MOSFETS

Pub. No.:    WO/2018/128858    International Application No.:    PCT/US2017/068198
Publication Date: Fri Jul 13 01:59:59 CEST 2018 International Filing Date: Sat Dec 23 00:59:59 CET 2017
IPC: H02M 1/32
H02M 5/458
H02J 3/38
H02M 1/00
Applicants: GENERAL ELECTRIC COMPANY
Inventors: WAGONER, Robert, Gregory
GANIREDDY, Govardhan
SHUKLA, Saurabh
RAJU, Ravisekhar, Nadimpalli
SCHNETZKA, Harold, Robert
Title: GROUNDING SCHEME FOR POWER CONVERTERS WITH SILICON CARBIDE MOSFETS
Abstract:
Systems and methods for grounding power generation systems with silicon carbide MOSFET power converters are provided. A power generation system can include a power generator comprising a multiphase rotor configured to generate multiphase alternating current power at a first voltage and a power converter comprising one or more silicon carbide MOSFETs and an isolation transformer. The power converter can be configured to convert the multiphase alternating current power from the power generator at the first voltage to multiphase alternating current power at a second voltage. The power generation system can be electrically grounded to shunt a leakage current associated with the isolation transformer of the power converter to a ground.