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1. (WO2018128856) GROUND FAULT ISOLATION FOR POWER CONVERTERS WITH SILICON CARBIDE MOSFETS

Pub. No.:    WO/2018/128856    International Application No.:    PCT/US2017/068191
Publication Date: Fri Jul 13 01:59:59 CEST 2018 International Filing Date: Sat Dec 23 00:59:59 CET 2017
IPC: H02M 1/32
H05K 7/20
H02M 5/458
G01R 31/02
H02J 3/38
H02M 1/00
Applicants: GENERAL ELECTRIC COMPANY
Inventors: WAGONER, Robert Gregory
GANIREDDY, Govardhan
SHUKLA, Saurabh
RAJU, Ravisekhar Nadimpalli
SCHNETZKA, Harold Robert
Title: GROUND FAULT ISOLATION FOR POWER CONVERTERS WITH SILICON CARBIDE MOSFETS
Abstract:
Systems and methods for grounding power generation units with silicon carbide MOSFET power converters are provided. A power generation unit can include a power generator configured to generate multiphase alternating current power at a first voltage. The power generation unit can also include a power converter configured to convert the multiphase alternating current power from the power generator at the first voltage to multiphase alternating current power at a second voltage. The power converter can include one or more silicon carbide MOSFETs and at least one heatsink configured to remove heat from the power converter. The at least one heatsink of the power converter can be electrically connected to a local ground formed by one or more components of the power generation unit.