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1. (WO2018128849) COMPOSITION AND METHOD FOR POLISHING SILICON CARBIDE

Pub. No.:    WO/2018/128849    International Application No.:    PCT/US2017/067947
Publication Date: Fri Jul 13 01:59:59 CEST 2018 International Filing Date: Fri Dec 22 00:59:59 CET 2017
IPC: C09G 1/02
C09G 1/04
C09K 3/14
Applicants: CABOT MICROELECTRONICS CORPORATION
Inventors: IVANOV, Roman
HUNG LOW, Fernando
KO, Cheng-Yuan
WHITENER, Glenn
Title: COMPOSITION AND METHOD FOR POLISHING SILICON CARBIDE
Abstract:
The invention provides a chemical mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.