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1. WO2018128707 - SUBSTRATE SUPPORT WITH IMPROVED PROCESS UNIFORMITY

Publication Number WO/2018/128707
Publication Date 12.07.2018
International Application No. PCT/US2017/060366
International Filing Date 07.11.2017
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 21/687 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01L 21/67103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67103mainly by conduction
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/6831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
H01L 21/68735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68735characterised by edge profile or support profile
H01L 21/68757
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68757characterised by a coating or a hardness or a material
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • HAO, Fangli
  • FU, Yuehong
  • CHEN, Zhigang
Agents
  • WIGGINS, Michael D.
  • AMBROSE, John
  • AQUINO, Damian
  • BERBERICH, Jeanette M.
  • BRENNAN, Michael P.
  • BRITT, Nancy K.
  • BROCK, Christopher M.
  • CASTELLANO, John A., III
  • CAUBLE, Christopher M.
  • CHANG, Alex C.
  • CHAPP, Jeffrey J.
  • CHO, David J.
  • CUTLER, Matthew L.
  • DALEY, Donald J.
  • DEAVER, Darin W.
  • DELASSUS, Gregory S.
  • DOERR, Michael P.
  • DOWDY, Stephanie L.
  • DRYSDALE, Nicholas S.
  • ELCHUK, Mark D.
  • ERJAVAC, Stanley M.
  • EUSEBI, Christopher A.
  • FALCOFF, Monte L.
  • FITZPATRICK, John
  • FORBIS, Glenn E.
  • FOSS, Stephen J.
  • FRANKLIN, Clarence C.
  • FRENTRUP, Mark A.
  • FULLER, Roland, III
  • FUSSNER, Anthony G.
  • GAMBLE, Michael D.
  • HEIST, Jason A.
  • HILTON, Michael E.
  • HOFFMAN, Erin G.
  • HOUSTON, Robert W.
  • HOYT, Blair M.
  • JENLINK, Ryan D.
  • KELLER, Paul A.
  • KESKAR, Hemant
  • KIM, Paul M.
  • KIM, Sung Pil
  • KORAL, Elisabeth
  • KOTSIS, Damian
  • KOZU, Kiyoshi
  • LAFATA, Joseph M.
  • LEE, Kisuk
  • LUCHSINGER, J. Bradley
  • MACINTYRE, Timothy D.
  • MALINZAK, Michael
  • MANNING, Daisy
  • MARTIN, Timothy J.
  • MASSEY, Ryan W.
  • MEYER, Greg
  • MIERZWA, Kevin
  • MILLER, Christopher K.
  • MILLER, Keith H.
  • MOUSTAKAS, George D.
  • NABI, Tarik M.
  • NYE, Michael
  • ODELL, Elizabeth D.
  • OLSON, Stephen T.
  • PANKA, Brian G.
  • PHIPPS, Michael J.
  • RAKERS, Leanne
  • RICHMOND, Derek
  • ROBINSON, Douglas A.
  • SCHIANO, Thomas E.
  • SCHIVLEY, Gregory G.
  • SCHMIDT, Michael J.
  • SEITZ, Brent G.
  • SIMINSKI, Robert M.
  • SMITH, Corey E.
  • SMITH, Michael L.
  • SNYDER, Jeffrey L.
  • STOBBS, Gregory A.
  • SUTER, David L.
  • TAYLOR, Michael L.
  • TAYLOR, W. R. Duke
  • TEICH, Michael L.
  • TELSCHER, JR., Rudolph A.
  • THOMAS, Michael J.
  • TUCKER, David J., Jr.
  • UTYKANSKI, David P.
  • VARCO, Michael A.
  • WADE, Bryant E.
  • WALKER, Donald G.
  • WALSH, JR., Joseph E.
  • WANGEROW, Steven
  • WARNER, Richard W.
  • WAXMAN, Andrew M.
  • WELCH, Gerald T.
  • WHEELOCK, Bryan K.
  • WOODSIDE, Jennifer
  • YACURA, Gary D.
  • ZALOBSKY, Michael D.
  • ZAREK, Paul
Priority Data
15/399,24405.01.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SUBSTRATE SUPPORT WITH IMPROVED PROCESS UNIFORMITY
(FR) SUPPORT DE SUBSTRAT PRÉSENTANT UNE UNIFORMITÉ DE TRAITEMENT AMÉLIORÉE
Abstract
(EN)
A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.
(FR)
L'invention concerne un support de substrat pour supporter un substrat dans un système de traitement de substrat comprenant une plaque de base et une couche de céramique disposée au-dessus de la plaque de base. Un périmètre externe de la couche de céramique est entouré par un anneau de bord. Un rayon externe de la couche de céramique est supérieur à un rayon interne de l'anneau de bord de telle sorte qu'un bord externe de la couche de céramique s'étend en-dessous de l'anneau de bord.
Latest bibliographic data on file with the International Bureau