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1. (WO2018128159) METHOD FOR INSPECTING QUALITY OF CHEMICAL FLUID
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/128159 International Application No.: PCT/JP2017/047208
Publication Date: 12.07.2018 International Filing Date: 28.12.2017
IPC:
G01N 33/00 (2006.01) ,G01N 21/31 (2006.01) ,G01N 24/08 (2006.01) ,G01N 27/62 (2006.01) ,G01N 30/72 (2006.01) ,G01N 30/86 (2006.01) ,G01N 30/88 (2006.01) ,G03F 7/26 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/304 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33
Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
25
Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31
Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
24
Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
08
by using nuclear magnetic resonance
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
62
by investigating the ionisation of gases; by investigating electric discharges, e.g. emission of cathode
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30
Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02
Column chromatography
62
Detectors specially adapted therefor
72
Mass spectrometers
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30
Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02
Column chromatography
86
Signal analysis
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30
Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02
Column chromatography
88
Integrated analysis systems specially adapted therefor, not covered by a single one of groups G01N30/04-G01N30/86146
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
上村 哲也 KAMIMURA Tetsuya; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
三和 晴子 MIWA Haruko; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2017-00118106.01.2017JP
2017-25112127.12.2017JP
Title (EN) METHOD FOR INSPECTING QUALITY OF CHEMICAL FLUID
(FR) PROCÉDÉ DE CONTRÔLE DE LA QUALITÉ D'UN FLUIDE CHIMIQUE
(JA) 薬液の品質検査方法
Abstract:
(EN) The purpose of the present invention is to provide a quality inspection method by which defect performance can be conveniently evaluated. The quality inspection method of the present invention is a method for inspecting the quality of a chemical fluid used in the production of a semiconductor substrate, and comprises, in following order: a step W for preparing a first container, and washing at least a portion of a fluid-contacting portion by using a portion of the chemical fluid; a step A for obtaining a c fluid by concentrating a portion of the chemical fluid by using the washed first container; a step B for measuring the content of a specific component in the c fluid; and a step C for comparing the content of the specific component with a predetermined reference value. At least the step W and the step A are performed in a clean room having a Class 4 purity or higher as defined by ISO14644-1:2015. Concentration is performed under at least one inert gas selected from the group consisting of Ar gas, He gas, and N2 gas, or is performed under reduced pressure. Measurement is performed by a predetermined measurement scheme.
(FR) Le but de la présente invention est de fournir un procédé de contrôle qualité permettant d'évaluer commodément une performance défectueuse. Le procédé de contrôle qualité de la présente invention est un procédé de contrôle de la qualité d'un fluide chimique utilisé dans la production d'un substrat semi-conducteur et qui comprend, dans l'ordre suivant : une étape W de préparation d'un premier récipient, puis de lavage d'au moins une partie d'une section en contact avec un fluide à l'aide d'une fraction du fluide chimique ; une étape A d'obtention d'un fluide c par concentration d'une fraction du fluide chimique à l'aide du premier récipient lavé ; une étape B de mesure du contenu en un composant spécifique du fluide c ; et une étape C de comparaison du contenu en composant spécifique avec une valeur de référence prédéterminée. Au moins l'étape W et l'étape A sont mises en œuvre dans une salle blanche présentant une pureté de classe 4 ou plus, telle que définie par la norme ISO14644-1:2015. La concentration est mise en œuvre sous au moins un gaz inerte choisi dans le groupe constitué du gaz Ar, du gaz He et du gaz N2, ou sous pression réduite. La mesure est effectuée conformément à un schéma de mesure prédéterminé.
(JA) 本発明は、簡便に欠陥性能を評価できる品質検査方法を提供することを課題とする。 本発明の品質検査方法は、半導体基板の製造に使用される薬液の品質検査方法であって、第1容器を準備するとともに、薬液の一部を用いて、接液部の少なくとも一部を洗浄する工程Wと、薬液の一部を洗浄後の第1容器を用いて濃縮してc液を得る工程Aと、c液中における特定成分の含有量を測定する工程Bと、特定成分の含有量をあらかじめ設定された基準値と比較する工程Cと、を、この順に有し、少なくとも工程W、及び、工程Aが、ISO14644-1:2015で定めるクラス4以上の清浄度を有するクリーンルーム内で実施され、濃縮が、Arガス、Heガス、及び、Nガスからなる群より選択される少なくとも1種の不活性ガス下で行われるか、又は、減圧下で行われ、測定が、所定の測定法により行われる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)