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1. (WO2018128093) SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD
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Pub. No.: WO/2018/128093 International Application No.: PCT/JP2017/046090
Publication Date: 12.07.2018 International Filing Date: 22.12.2017
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
吉田 幸史 YOSHIDA, Yukifumi; JP
樋口 鮎美 HIGUCHI, Ayumi; JP
山口 直子 YAMAGUCHI, Naoko; JP
Agent:
松阪 正弘 MATSUSAKA, Masahiro; JP
田中 勉 TANAKA, Tsutomu; JP
井田 正道 IDA, Masamichi; JP
Priority Data:
2017-00067605.01.2017JP
2017-24184518.12.2017JP
Title (EN) SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD
(FR) DISPOSITIF DE NETTOYAGE DE SUBSTRAT ET PROCÉDÉ DE NETTOYAGE DE SUBSTRAT
(JA) 基板洗浄装置および基板洗浄方法
Abstract:
(EN) According to the present invention, a treatment liquid that includes a solvent and a solute is supplied to a substrate (9). At least one portion of the solvent volatilizes from the treatment liquid, which solidifies or hardens and becomes a particle-holding layer. A removal liquid is supplied to the substrate (9), and the particle-holding layer is removed from the substrate (9). The solute component of the particle-holding layer is insoluble or poorly insoluble in the removal liquid, and the solvent is soluble. When heated to a transformation temperature or higher, the solute component of the particle-holding layer transforms and becomes soluble in the removal liquid. The removal liquid is supplied after the formation of the particle-holding layer without the solute component having been transformed.
(FR) Selon la présente invention, un liquide de traitement qui inclut un solvant et un soluté est appliqué à un substrat (9). Au moins une partie du solvant se volatilise du liquide de traitement, qui se solidifie ou durcit et devient une couche de maintien de particules. Un liquide de retrait est appliqué au substrat (9), et la couche de maintien de particules est retirée du substrat (9). Le composant de soluté de la couche de maintien de particules est insoluble ou difficilement soluble dans le liquide de retrait, et le solvant est soluble. Lorsqu’il est chauffé à une température de transformation ou au-delà, le composant de soluté de la couche de maintien de particules se transforme et devient soluble dans le liquide de retrait. Le liquide de retrait est appliqué après la formation de la couche de maintien de particules sans que le composant de soluté ait été transformé.
(JA) 基板(9)上に、溶媒および溶質を含む処理液が供給される。処理液から溶媒の少なくとも一部が揮発して処理液が固化または硬化することにより、処理液がパーティクル保持層となる。基板(9)上に除去液が供給され、パーティクル保持層が基板(9)から除去される。パーティクル保持層に含まれる溶質成分は、除去液に対して不溶性または難溶性であり、溶媒は可溶性である。パーティクル保持層に含まれる溶質成分は、変質温度以上に加熱した場合に変質して除去液に対して可溶性になる性質を有する。除去液は、パーティクル保持層が形成された後、溶質成分を変質させる工程を経ることなく供給される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)