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1. (WO2018126161) OPTICAL ISOLATION SYSTEMS AND CIRCUITS AND PHOTON DETECTORS WITH EXTENDED LATERAL P-N JUNCTIONS
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Pub. No.: WO/2018/126161 International Application No.: PCT/US2017/068997
Publication Date: 05.07.2018 International Filing Date: 29.12.2017
IPC:
H01L 31/16 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16
the semiconductor device sensitive to radiation being controlled by the light source or sources
Applicants:
TEXAS INSTRUMENTS INCORPORATED [US/US]; P.o. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-shinjuku 6-chome Shinjuku-ku, Tokyo, 160-8366, JP (JP)
Inventors:
MALE, Barry Jon; US
Agent:
DAVIS, Michael A., Jr.; US
CHEN, Daniel; US
Priority Data:
15/395,58430.12.2016US
15/612,32702.06.2017US
Title (EN) OPTICAL ISOLATION SYSTEMS AND CIRCUITS AND PHOTON DETECTORS WITH EXTENDED LATERAL P-N JUNCTIONS
(FR) SYSTÈMES ET CIRCUITS D'ISOLATION OPTIQUE ET DÉTECTEURS DE PHOTONS DOTÉS DE JONCTIONS P-N LATÉRALES ÉTENDUES
Abstract:
(EN) Disclosed examples include lateral photovoltaic sensors (100) and systems with one or more semiconductor structures (101, 103) individually including a lateral sensor face (107b) to receive photons of a given wavelength (λ), and an extended lateral junction region having an effective junction distance (D) greater than 5 times an absorption depth for the semiconductor structure that corresponds to the given wavelength (λ), to facilitate high current transfer ratios for use in low-noise, high-efficiency power supply applications as well as optically isolated data transfer or photon detector applications.
(FR) Des exemples décrits concernent des capteurs photovoltaïques latéraux (100) et des systèmes pourvus d'une ou plusieurs structures semi-conductrices (101, 103) comprenant individuellement une face de capteur latérale (107b) pour recevoir des photons d'une longueur d'onde donnée (lambda), et une région de jonction latérale étendue ayant une distance de jonction efficace (D) supérieure à 5 fois une profondeur d'absorption pour la structure semi-conductrice qui correspond à la longueur d'onde donnée (lambda), afin de faciliter des rapports de transfert de courant élevé destinés à être utilisés dans des applications d'alimentation électrique à haut rendement et à faible bruit, ainsi que dans des applications de transfert de données ou de détection de photons optiquement isolées.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)