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1. (WO2018125470) HIGH-EFFICIENCY SEMICONDUCTOR LASER
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Pub. No.: WO/2018/125470 International Application No.: PCT/US2017/063475
Publication Date: 05.07.2018 International Filing Date: 28.11.2017
IPC:
H01S 5/12 (2006.01) ,H01S 5/30 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors: DOUSSIERE, Pierre; US
DOYLEND, Jonathan K.; US
Agent: MOORE, Michael S.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
BRASK, Justin K.; US
COFIELD, Michael A.; US
COWGER, Graciela G.; US
DANSKIN, Timothy A.; US
FORD, Stephen S.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
PARKER, Wesley E.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
SULLIVAN, Stephen; US
WANG, Yuke; US
WARD, Jonathan M.; US
YATES, Steven D.; US
Priority Data:
15/392,87528.12.2016US
Title (EN) HIGH-EFFICIENCY SEMICONDUCTOR LASER
(FR) LASER À SEMICONDUCTEUR À HAUT RENDEMENT
Abstract:
(EN) Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.
(FR) Des modes de réalisation de la présente invention peuvent se rapporter à un laser à rétroaction répartie à base de silicium hybride (DFB), la lumière étant destinée à se propager à travers le laser DFB le long d'une longueur du laser DFB. Le laser DFB peut comprendre un mesa avec un canal de courant qui s'étend du premier côté du mesa au second côté du mesa. A un premier emplacement le long de la longueur du laser DFB, le canal de courant peut avoir une première largeur et/ou le mesa peut avoir une seconde largeur. A un second emplacement le long de la longueur du laser DFB, le canal de courant peut avoir une troisième largeur et/ou le mesa peut avoir une quatrième largeur telle que mesurée dans une direction perpendiculaire à la longueur du laser DFB. D'autres modes de réalisation peuvent être décrits et/ou revendiqués.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)