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1. (WO2018125386) DOPING OF SELECTOR AND STORAGE MATERIALS OF A MEMORY CELL
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Pub. No.: WO/2018/125386 International Application No.: PCT/US2017/060450
Publication Date: 05.07.2018 International Filing Date: 07.11.2017
IPC:
H01L 27/06 (2006.01) ,H01L 21/3215 (2006.01) ,H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
3215
Doping the layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; Intel Corporation 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
GEALY, Daniel; US
GOTTI, Andrea; US
COLLINS, Dale W.; US
LENGADE, Swapnil A.; US
Agent:
YAZICIGIL, Vanessa L.; US
NELSON, Kenneth; US
Priority Data:
15/391,75727.12.2016US
Title (EN) DOPING OF SELECTOR AND STORAGE MATERIALS OF A MEMORY CELL
(FR) DOPAGE DE MATÉRIAUX DE SÉLECTION ET DE STOCKAGE D'UNE CELLULE DE MÉMOIRE
Abstract:
(EN) Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.
(FR) L'invention concerne, selon des modes de réalisation, le dopage d'un élément de stockage, d'un élément sélecteur, ou des deux, d'une cellule de mémoire à l'aide d'un dopant contenant de l'aluminium (Al) et/ou du zirconium (Zr) et/ou de l'hafnium (Hf) et/ou du silicium (Si) permettant de réduire à un minimum les variations de volume ou de densité dans une mémoire à changement de phase ainsi que l'électromigration. Dans un mode de réalisation, une cellule de mémoire comprend des première et seconde électrodes, et un élément de stockage comportant une couche de matériau à changement de phase dopé située entre les première et seconde électrodes, le matériau à changement de phase dopé comprenant de l'aluminium et/ou du zirconium et/ou de l'hafnium et/ou du silicium. L'élément de stockage, un élément sélecteur, ou les deux peuvent être dopés à l'aide de techniques telles que la co-pulvérisation ou le dépôt de couches alternées d'une couche dopante et d'un matériau de stockage (ou sélecteur).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)