WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
1. (WO2018125248) HEUSLER ALLOY BASED MAGNETIC TUNNEL JUNCTIONS AND REFRACTORY INTERCONNECTS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/125248 International Application No.: PCT/US2016/069638
Publication Date: 05.07.2018 International Filing Date: 31.12.2016
IPC:
H01L 43/10 (2006.01) ,H01L 43/02 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants: MANIPATRUNI, Sasikanth[IN/US]; US
CHAWLA, Jasmeet S.[IN/US]; US
WIEGAND, Christopher J.[US/US]; US
NIKONOV, Dmitri E.[US/US]; US
GOLONZKA, Oleg[US/US]; US
YOUNG, Ian A.[US/US]; US
INTEL CORPORATION[US/US]; 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95054, US
Inventors: MANIPATRUNI, Sasikanth; US
CHAWLA, Jasmeet S.; US
WIEGAND, Christopher J.; US
NIKONOV, Dmitri E.; US
GOLONZKA, Oleg; US
YOUNG, Ian A.; US
Agent: BRASK, Justin, K.; US
Priority Data:
Title (EN) HEUSLER ALLOY BASED MAGNETIC TUNNEL JUNCTIONS AND REFRACTORY INTERCONNECTS
(FR) JONCTIONS TUNNEL MAGNÉTIQUES À BASE D'ALLIAGE DE HEUSLER ET INTERCONNEXIONS RÉFRACTAIRES
Abstract:
(EN) Embodiments are generally directed to Heusler alloy based magnetic tunnel junctions and refractory interconnects. An embodiment of an apparatus includes a magnetic tunnel junction (MTJ) stack of an MRAM (Magnetoresistive Random Access Memory), the MTJ stack including a free magnetic layer and a fixed magnetic later, wherein the magnetic tunnel junction stack including one or more Heusler alloys; and metal interconnects for the MRAM, wherein the metal interconnects include one or more refractory metals, Silicides or Germinides of Nickel or Cobalt, refractory Heusler alloy, or Silicides of Heusler alloy.
(FR) L'invention concerne de manière générale des modes de réalisation de jonctions tunnel magnétiques à base d'alliage de Heusler et des interconnexions réfractaires. Un mode de réalisation d'un appareil comprend une pile à jonction tunnel magnétique (MTJ) d'une MRAM (mémoire vive magnétorésistive), l'empilement MTJ comprenant une couche magnétique libre et une couche magnétique fixe, l'empilement de jonctions à effet tunnel magnétique comprenant un ou plusieurs alliages de Heusler ; et des interconnexions métalliques pour la MRAM, les interconnexions métalliques comprenant un ou plusieurs métaux réfractaires, siliciures ou germinats de Nickel ou de Cobalt, un alliage de Heusler réfractaire, ou des siliciures d'alliage de Heusler.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)