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1. (WO2018125246) LARGE SCALE INTEGRATION OF HAPTIC DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2018/125246 International Application No.: PCT/US2016/069633
Publication Date: 05.07.2018 International Filing Date: 31.12.2016
IPC:
H01L 41/09 (2006.01) ,H01L 41/193 (2006.01) ,H01L 41/25 (2013.01) ,H01L 41/27 (2013.01) ,G06F 3/01 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
193
Macromolecular compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
25
Assembling devices that include piezo-electric or electrostrictive parts
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
27
Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
3
Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
01
Input arrangements or combined input and output arrangements for interaction between user and computer
Applicants:
FACEBOOK TECHNOLOGIES, LLC [US/US]; 1601 Willow Road Menlo Park, CA 94025, US
Inventors:
KELLER, Sean Jason; US
TRUTNA, Tristan Thomas; US
Agent:
HULSE, Robert A.; US
AHN, Dohyun; US
BRANNON, Brian, G.; US
BINGHAM, Jonathan, W.; US
ZHANG, Guang; US
Priority Data:
15/390,88227.12.2016US
Title (EN) LARGE SCALE INTEGRATION OF HAPTIC DEVICES
(FR) INTÉGRATION À GRANDE ÉCHELLE DE DISPOSITIFS HAPTIQUES
Abstract:
(EN) A method for large scale integration of haptic devices is described. The method comprises forming a first elastomer layer of a large scale integration (LSI) device on a substrate according to a specified manufacturing process, the first elastomer layer having a plurality of fluid based circuits, the first elastomer layer adhering to a plurality of formation specifications. The method further comprises curing the first elastomer layer. Additionally, one or more additional elastomer layers of the LSI device are formed with the first elastomer layer according to the specified manufacturing process, the one or more additional elastomer layers having a plurality of fluid based circuits, the one or more additional elastomer layers adhering to the plurality of formation specifications.
(FR) La présente invention concerne un procédé d'intégration à grande échelle de dispositifs haptiques. Le procédé consiste à former une première couche élastomère d'un dispositif d'intégration à grande échelle (LSI) sur un substrat selon un procédé de fabrication spécifié, la première couche élastomère ayant une pluralité de circuits à base de fluide, la première couche élastomère adhérant à une pluralité de spécifications de formation. Le procédé consiste en outre à durcir la première couche élastomère. De plus, une ou plusieurs couches élastomères supplémentaires du dispositif LSI sont formées avec la première couche élastomère selon le processus de fabrication spécifié, lesdites couches élastomères supplémentaires ayant une pluralité de circuits à base de fluide, lesdites couches élastomères supplémentaires adhérant à la pluralité de spécifications de formation.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)