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1. WO2018125140 - METAL OXIDE THIN FILM TRANSISTORS WITH CONTROLLED HYDROGEN

Publication Number WO/2018/125140
Publication Date 05.07.2018
International Application No. PCT/US2016/069213
International Filing Date 29.12.2016
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
H01L 29/4908
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4908for thin film semiconductor, e.g. gate of TFT
H01L 29/66969
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • AHMED, Khaled
Agents
  • WANG, Yuke
  • PARKER, Wesley E.
  • RASKIN, Vladimir
  • AUYEUNG, Al
  • STRAUSS, Ryan N.
  • MOORE, Michael S.
  • MAKI, Nathan R.
  • BLAIR, Steven R.
  • DANSKIN, Timothy A.
  • MARLINK, Jeffrey S.
  • MEININGER, Mark M.
  • LEE, Katherine D.
  • COWGER, Graciela G.
  • KIRKPATRICK, Bryan D.
  • COFIELD, Michael A.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METAL OXIDE THIN FILM TRANSISTORS WITH CONTROLLED HYDROGEN
(FR) TRANSISTORS À FILM MINCE D'OXYDE MÉTALLIQUE À HYDROGÈNE CONTRÔLÉ
Abstract
(EN)
Embodiments herein describe techniques for a semiconductor device including a HDB layer protecting the channel layer of a TFT from hydrogen diffusion, e.g., from the gate dielectric layer. Embodiments may include a substrate, and a gate electrode above the substrate. A gate dielectric layer may conformally cover the gate electrode and the substrate. A HDB layer may be above the gate dielectric layer, and a channel layer may be above the HDB layer. Hence, the HDB layer may be between the gate dielectric layer and the channel layer, reducing the hydrogen diffusion from the gate dielectric layer to the channel layer. For a channel layer, TiO2, Al2O3, AlN, doped-TiO2, or doped-Al2O3, may be selected as a material for the HDB layer. Other embodiments may be described and/or claimed.
(FR)
Des modes de réalisation de la présente invention concernent des techniques pour un dispositif semiconducteur comprenant une couche HDB qui protège la couche de canal d'un TFT contre la diffusion d'hydrogène, par exemple provenant de la couche diélectrique de gâchette. Des modes de réalisation peuvent comprendre un substrat et une électrode de gâchette au-dessus du substrat. Une couche diélectrique de gâchette peut recouvrir de manière enrobante l'électrode de gâchette et le substrat. Une couche HDB peut se trouver au-dessus de la couche diélectrique de gâchette et une couche de canal peut se trouver au-dessus de la couche HDB. Par conséquent, la couche HDB peut se trouver entre la couche diélectrique de gâchette et la couche de canal, réduisant la diffusion d'hydrogène de la couche diélectrique de gâchette à la couche de canal. Pour une couche de canal, du TiO2, de l'Al2O3, de l'AlN, du TiO2 dopé ou de l'Al2O3 dopé peut être sélectionnée en tant que matériau pour la couche HDB. L'invention concerne également d'autres modes de réalisation.
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